Datasheet > RS1MAF

RS1MAF

更新时间： 2024-09-14 19:49:15

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中文翻译

获取价格

技术参数
数据手册

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RS1MAF 技术参数

Case Style：	SMAF	IVA(A)：	1.0
VRRM (V)：	1000	IFSM (A)：	30
VF (V)：	1.3	@IVA(A)：	1.0
Maximum reverse current：	5.0	TRR(nS)：	500
class：	Diodes

RS1MAF 数据手册

RS1AFA--RS1MFA

Surface Mount Rectifiers

FEATURES

SMAF

ꢀ

Low profile package

ꢀ

For surface mounted applications

Built-in strain relief, ideal for automated placement

High temperature soldering: 260^oC/10 seconds at terminals

Plastic package has underwriters, laborator flammability classification 94V-0

MECHANICAL DATA

Case :JEDEC SMAFL, molded plastic over ,passivated chip

ꢀ

Terminals: Solder plated, solderable per MIL-STD-750, Method 2026

Polarity: color band denotes cathode end

Marking Information

LGE：Lu Guang Electronic XXXX：

marking code (RS1A-RS1M)

XXXX

Maximum Ratings (@TA = 25°C unless otherwise specified)

RS1A

RS1B

RS1D

RS1G

RS1J

RS1K

RS1M

UNITS

Characteristic

Symbol

Maximum recurrent peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

1.0

600

420

600

800

560

800

1000

700

Maximum DC blocking voltage

Maximum average forward rectified current T_L=90℃

Peak forward surge current

100

1000

I_F(AV)

8.3ms single half-sine-wave

I_FSM

superimposed on rated load

Thermal Characteristics

RS1A

RS1B

RS1D

RS1G

RS1J

RS1K

RS1M

Characteristic

Symbol

UNITS

Typical junction capacitance (Note2)

C_J

7.0

p F

Typical thermal resistance

(Note3)

R_ΘJL

℃/W

T_JT_STG

- 55 ------ + 150

℃

Operating junction and storage temperature range

Electrical Characteristics (@TA = 25°C unless otherwise specified)

RS1A

RS1B

RS1D

RS1G

RS1J

RS1K

RS1M

Characteristic

Symbol

UNITS

Maximum instantaneous forward voltage at1.0 A

V_F

I_R

1.30

Maximum reverse current

at rated DC blocking voltage

@T_A=25 ℃

@T_A=125℃

5.0

μ A

50.0

Typical reverse recovery time (Note1)

t_rr

150

250

500

NOTE: 1.Reverse recovery time test conditions: I_F=0.5A, I_R=1.0A, I_rr=0.25A

2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts

3. Thermal resistance from junction to lea

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

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