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RS1M-7 PDF预览

RS1M-7

更新时间： 2024-11-14 20:40:19
品牌 Logo 应用领域
美台 - DIODES 光电二极管
页数 文件大小 规格书
2页 85K
描述
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, PLASTIC, SMA, 2 PIN

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中文翻译

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RS1M-7 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete包装说明：R-PDSO-C2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.01配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：R-PDSO-C2JESD-609代码：e0
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-65 °C
最大输出电流：1 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：235认证状态：Not Qualified
最大重复峰值反向电压：1000 V最大反向恢复时间：0.5 µs
表面贴装：YES端子面层：TIN LEAD
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：10Base Number Matches：1

RS1M-7 数据手册

 浏览型号RS1M-7的Datasheet PDF文件第2页 
RS1A/B - RS1M/B  
1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER  
Features  
·
·
·
Glass Passivated Die Construction  
Fast Recovery Time For High Efficiency  
Low Forward Voltage Drop and High Current  
Capability  
B
SMA  
Min  
SMB  
Min  
·
·
·
Surge Overload Rating to 30A Peak  
Ideally Suited for Automated Assembly  
Plastic Material: UL Flammability  
Classification Rating 94V-0  
Dim  
A
Max  
2.92  
4.60  
1.63  
0.31  
5.59  
0.20  
1.52  
2.62  
Max  
3.94  
4.57  
2.21  
0.31  
5.59  
0.20  
1.52  
2.62  
A
J
2.29  
4.00  
1.27  
0.15  
4.80  
0.10  
0.76  
2.01  
3.30  
4.06  
1.96  
0.15  
5.00  
0.10  
0.76  
2.00  
C
D
B
C
Mechanical Data  
·
D
Case: Molded Plastic  
Terminals: Solder Plated Terminal -  
Solderable per MIL-STD-202, Method 208  
Polarity: Cathode Band or Cathode Notch  
SMA Weight: 0.064 grams (approx.)  
SMB Weight: 0.093 grams (approx.)  
Mounting Position: Any  
E
·
G
H
G
H
·
·
·
·
·
E
J
A, B, D, G, J, K, M Suffix Designates SMA Package  
AB, BB, DB, GB, JB, KB, MB Suffix Designates SMB Package  
Marking: Type Number  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RS1  
A/AB  
RS1  
B/BB  
RS1  
RS1  
RS1  
J/JB  
RS1  
RS1  
Characteristic  
Symbol  
Unit  
D/DB G/GB  
K/KB M/MB  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
280  
1.0  
V
A
Average Rectified Output Current  
@ TT = 120°C  
Non-Repetitive Peak Forward Surge Current,  
8.3ms single half sine-wave Superimposed on Rated Load  
(JEDEC Method)  
IFSM  
30  
A
Forward Voltage Drop  
@ IF = 1.0A  
VFM  
IRM  
1.3  
V
5.0  
200  
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TA 25°C  
=
µA  
@ TA = 125°C  
trr  
Cj  
Reverse Recovery Time (Note 3)  
150  
250  
500  
ns  
pF  
Typical Junction Capacitance (Note 2)  
15  
20  
RqJT  
Tj, TSTG  
Typical Thermal Resistance, Junction to Terminal (Note 1)  
Operating and Storage Temperature Range  
K/W  
°C  
-65 to +150  
Notes:  
1. Valid provided that terminals are kept at ambient temperature.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
3. Reverse Recovery Test Conditions: IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.  
DS15002 Rev. G-2  
1 of 2  
RS1A/B - RS1M/B  
www.diodes.com  
ã Diodes Incorporated  
12

中文翻译

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