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RS1K-T3-LF PDF预览

RS1K-T3-LF

更新时间： 2024-11-15 15:49:59
品牌 Logo 应用领域
WTE 瞄准线光电二极管
页数 文件大小 规格书
4页 68K
描述
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

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RS1K-T3-LF 数据手册

 浏览型号RS1K-T3-LF的Datasheet PDF文件第2页浏览型号RS1K-T3-LF的Datasheet PDF文件第3页浏览型号RS1K-T3-LF的Datasheet PDF文件第4页 
WTE  
POWER SEMICONDUCTORS  
RS1A – RS1M  
1.0A SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY DIODE  
Features  
ꢀ
Glass Passivated Die Construction  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Ideally Suited for Automatic Assembly  
Low Forward Voltage Drop, High Efficiency  
Surge Overload Rating to 30A Peak  
Low Power Loss  
Fast Recovery Time  
Plastic Case Material has UL Flammability  
Classification Rating 94V-O  
B
D
A
F
C
H
G
E
SMA/DO-214AC  
Min  
Mechanical Data  
Dim  
A
Max  
2.90  
4.60  
1.60  
0.305  
5.28  
2.44  
0.203  
1.52  
ꢀ
Case: SMA/DO-214AC, Molded Plastic  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
2.50  
ꢀ
B
4.00  
C
1.20  
ꢀ
ꢀ
ꢀ
ꢀ
Polarity: Cathode Band or Cathode Notch  
Marking: Type Number  
Weight: 0.064 grams (approx.)  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
D
0.152  
4.80  
E
F
2.00  
G
H
0.051  
0.76  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
RS1A RS1B  
RS1D RS1G  
RS1J  
RS1K RS1M  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
1.0  
V
A
Average Rectified Output Current @TL = 90°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
30  
A
Forward Voltage  
@IF = 1.0A  
VFM  
IRM  
1.30  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 125°C  
5.0  
300  
µA  
Reverse Recovery Time (Note 1)  
trr  
Cj  
150  
250  
500  
nS  
pF  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Operating and Storage Temperature Range  
10  
32  
RθJL  
Tj, TSTG  
°C/W  
°C  
-50 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
3. Mounted on P.C. Board with 8.0mm2 land area.  
RS1A – RS1M  
1 of 4  
© 2006 Won-Top Electronics  
1234

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