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RS1008FL-T1-LF

更新时间： 2024-11-20 08:07:31
品牌 Logo 应用领域
WTE 光电二极管
页数 文件大小 规格书
4页 40K
描述
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon,

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RS1008FL-T1-LF 数据手册

 浏览型号RS1008FL-T1-LF的Datasheet PDF文件第2页浏览型号RS1008FL-T1-LF的Datasheet PDF文件第3页浏览型号RS1008FL-T1-LF的Datasheet PDF文件第4页 
®
RS1000FL – RS1010FL  
1.0A SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY DIODE  
WON-TOP ELECTRONICS  
Features  
Low Profile 1.08mm Max. Case Height  
Glass Passivated Die Construction  
Low Forward Voltage Drop, High Efficiency  
Surge Overload Rating to 30A Peak  
Fast Recovery Time  
Ideally Suited for Automatic Assembly  
Plastic Material – UL Recognition Flammability  
Classification 94V-0  
A
SOD-123FL  
Min  
Dim  
A
Max  
3.70  
2.95  
1.95  
1.35  
0.20  
1.08  
0.80  
C
3.30  
D
B
2.60  
B
C
1.65  
D
0.75  
E
G
E
0.10  
Mechanical Data  
G
0.98  
H
0.50  
Case: SOD-123FL, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
All Dimensions in mm  
Polarity: Cathode Band  
Weight: 0.017 grams (approx.)  
Marking: Device Code, See Page 3  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
H
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
RS  
RS  
RS  
RS  
RS  
RS  
RS  
Characteristic  
Symbol  
Unit  
1000FL 1001FL 1002FL 1004FL 1006FL 1008FL 1010FL  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
1.0  
V
A
Average Rectified Output Current  
@TL = 75°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
30  
A
Forward Voltage  
@IF = 1.0A  
VFM  
IRM  
1.3  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 125°C  
10  
300  
µA  
Reverse Recovery Time (Note 1)  
trr  
150  
250  
500  
nS  
pF  
Typical Junction Capacitance (Note 2)  
CJ  
10  
Thermal Resistance Junction to Ambient (Note 3)  
Thermal Resistance Junction to Ambient (Note 4)  
Thermal Resistance Junction to Lead (Note 3)  
Thermal Resistance Junction to Lead (Note 4)  
RθJA  
RθJA  
RθJL  
RθJL  
325  
82  
26  
°C/W  
°C  
21  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
3. Mounted on FR-4 P.C. Board with minimum recommended pad size.  
4. Mounted on FR-4 P.C. Board with 700mm2 copper pads.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
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