是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | QFN | 包装说明: | HVQCCN, |
针数: | 20 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
风险等级: | 5.84 | Is Samacsys: | N |
内置保护: | OVER CURRENT; THERMAL; UNDER VOLTAGE | 接口集成电路类型: | BUFFER OR INVERTER BASED PERIPHERAL DRIVER |
JESD-30 代码: | S-XQCC-N20 | 长度: | 4 mm |
功能数量: | 1 | 端子数量: | 20 |
最高工作温度: | 100 °C | 最低工作温度: | -40 °C |
输出电流流向: | SOURCE AND SINK | 封装主体材料: | UNSPECIFIED |
封装代码: | HVQCCN | 封装形状: | SQUARE |
封装形式: | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 座面最大高度: | 1 mm |
最大供电电压: | 3.6 V | 最小供电电压: | 3 V |
标称供电电压: | 3.3 V | 表面贴装: | YES |
温度等级: | INDUSTRIAL | 端子形式: | NO LEAD |
端子节距: | 0.5 mm | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 4 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
BD416 | MICRO-ELECTRONICS | Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti |
获取价格 |
|
BD417 | ETC | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-220AB |
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|
BD418 | ONSEMI | TRANSISTOR,BJT,PNP,80V V(BR)CEO,1A I(C),TO-220AB |
获取价格 |
|
BD41931 | ETC | SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
获取价格 |
|
BD4201FV | ROHM | Battery Backup IC |
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|
BD4210EKN | ROHM | Strobe Charge Control IC |
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