1N4531 / 1N4148 / 1N4150 / 1N4448
Diodes
Switching diode
1N4531 / 1N4148 / 1N4150 / 1N4448
This product is available only outside of Japan.
zExternal dimensions (Units : mm)
zApplication
High-speed switching
1N4531
CATHODE BAND (BLACK)
Type No.
φ 0.5±0.1
zFeatures
C
A
1) Glass sealed envelope. (MSD, GSD)
2) High speed.
φ 1.8±0.2
29±1
2.7±
0.3
29±1
3) High reliability.
ROHM : MSD
EIAJ : −
JEDEC : DO-34
zConstruction
1N4148 / 1N4150 / 1N4448
Silicon epitaxial planar
CATHODE BAND (BLACK)
Type No.
φ 0.5±0.1
C
A
φ 1.8±0.2
29±1
3.8±
0.2
29±1
ROHM : GSD
EIAJ : −
JEDEC : DO-35
zAbsolute maximum ratings (Ta = 25°C)
I
FSM
V
(V)
RM
V
(V)
R
I
FM
I
O
I
F
P
(mW)
Tj
°C
Topr
Tstg
°C
1µs
(A)
Type
(mA)
(mA)
(mA)
(
)
(°C
)
(
)
1N4531
1N4148
1N4150
1N4448
100
100
50
75
75
50
75
450
450
600
450
150
150
200
150
200
200
250
200
2
2
4
2
500
500
500
500
200
200
200
200
−65
−65
−65
−65
~+200
~+200
~+200
~+200
−65
−65
−65
−65
~+200
~+200
~+200
~+200
100
zElectrical characteristics (Ta = 25°C)
V
F
(V)
BV (V) Min.
I
R
(µA) Max.
@25°C @150°C
(V) (V)
0.025 20
5.0 75
0.025 20
C
r
(pF)
t
V
rr (ns)
=6V
=10mA
R
Type
VR=0
f=1MHz
@
@
@
@
@
@
@
@
@
@
@
@
@
@
I
F
0.1mA 0.25mA 1mA
2mA
5mA
10mA 20mA 30mA 50mA 100mA 200mA 250mA 5µA 100µA
V
R
V
R
RL
=100Ω
1N4531
1N4148
1N4150
1N4448
75
75
−
100
100
50
50.0
50.0
20
20
4
4
1.0
1.0
4
2.5
4
4
4
4
5.0
75
0.54
0.62
0.66
0.76
0.86
0.82
0.92
0.87
1.0
0.1
50 100.0 50
0.74
0.62
0.025 20
5.0 75
−
100
50.0
20
0.72
and the lower figure is the maximum V
1.0
The upper figure is the minimum V
F
F
value.