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RO3103

更新时间： 2024-09-28 19:44:35
品牌 Logo 应用领域
村田 - MURATA 晶体谐振器
页数 文件大小 规格书
2页 1060K
描述
1-Port Saw Resonator, 418MHz Nom, ROHS COMPLIANT, HERMETIC, LOW-PROFILE, TO39-3

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中文翻译

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RO3103 技术参数

生命周期：Obsolete包装说明：ROHS COMPLIANT, HERMETIC, LOW-PROFILE, TO39-3
Reach Compliance Code：unknown风险等级：5.84
晶体/谐振器类型：1-PORT频率容差 (MHz)：0.075
插入损耗：2 dB安装特点：THROUGH HOLE MOUNT
标称工作频率：418 MHz并联电容：2.1 pF
物理尺寸：D9.4XH3.18 (mm)/D0.37XH0.125 (inch)表面贴装：NO
Base Number Matches：1

RO3103 数据手册

 浏览型号RO3103的Datasheet PDF文件第2页 
RO3103  
• Ideal for 418 MHz Transmitters  
• Very Low Series Resistance  
• Quartz Stability  
• Rugged, Hermetic, Low-Profile TO39 Case  
• Complies with Directive 2002/95/EC (RoHS)  
418.0 MHz  
SAW  
Pb  
Resonator  
The RO3103 is a true one-port, surface-acoustic-wave (SAW) resonator in a low-profile TO39 case. It  
provides reliable, fundamental-mode, quartz frequency stabilization of fixed-frequency transmitters operating  
at 418.0 MHz. The RO2103 is designed specifically for remote-control and wireless security transmitters  
operating in the United Kingdom under dTI MPT 1340 and in the USA under FCC Part 15.  
Absolute Maximum Ratings  
Rating  
Value  
Units  
CW RF Power Dissipation (See: Typical Test Circuit)  
+0  
dBm  
DC Voltage Between Any Two Pins (Observe ESD Precautions)  
Case Temperature  
±30  
-40 to +85  
260  
VDC  
°C  
Soldering Temperature (10 seconds / 5 cycles maximum)  
°C  
TO39-3 Case  
Electrical Characteristics  
Characteristic  
Sym  
Notes  
Minimum  
Typical  
Maximum  
Units  
Center Frequency (+25 °C)  
Absolute Frequency  
f
417.925  
418.075  
MHz  
kHz  
dB  
C
2, 3, 4, 5  
Tolerance from 418.000 MHz  
∆f  
±75  
2.0  
C
Insertion Loss  
Quality Factor  
IL  
1.2  
8300  
1100  
25  
2, 5, 6  
5, 6, 7  
Unloaded Q  
Q
U
50 Ω Loaded Q  
Q
L
Temperature Stability  
Turnover Temperature  
Turnover Frequency  
T
f
10  
40  
°C  
kHz  
O
f + 1.3  
6, 7, 8  
O
c
2
Frequency Temperature Coefficient  
Absolute Value during the First Year  
FTC  
0.037  
ppm/°C  
Frequency Aging  
|f |  
≤10  
ppm/yr  
MΩ  
Ω
1
5
A
DC Insulation Resistance between Any Two Pins  
1.0  
RF Equivalent RLC Model  
Motional Resistance  
R
15  
47.4  
3.1  
M
Motional Inductance  
L
µH  
fF  
5, 7, 9  
M
Motional Capacitance  
C
M
Pin 1 to Pin 2 Static Capacitance  
Transducer Static Capacitance  
C
5, 6, 9  
5, 6, 7, 9  
2, 7  
2.4  
pF  
O
C
2.1  
pF  
P
Test Fixture Shunt Inductance  
L
61.6  
nH  
TEST  
Lid Symbolization (in Addition to Lot and/or Date Codes)  
RFM RO3103  
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.  
Notes:  
1.  
2.  
Frequency aging is the change in f with time and is specified at +65°C or  
C
subject to change without notice.  
7.  
8.  
Derived mathematically from one or more of the following directly  
measured parameters: f , IL, 3 dB bandwidth, f versus T , and C .  
less. Aging may exceed the specification for prolonged temperatures  
above +65°C. Typically, aging is greatest the first year after manufacture,  
decreasing significantly in subsequent years.  
C
C
C
O
Turnover temperature, T , is the temperature of maximum (or turnover)  
O
The center frequency, f , is measured at the minimum insertion loss point,  
frequency, f . The nominal frequency at any case temperature, T , may be  
C
O
C
IL , with the resonator in the 50 Ω test system (VSWR ≤ 1.2:1). The  
2
MIN  
calculated from: f = f [1 - FTC (T -T ) ]. Typically, oscillator T is 20°C  
O
O
C
O
shunt inductance, L  
, is tuned for parallel resonance with C at f .  
TEST  
O C  
less than the specified resonator T .  
This equivalent RLC model approximates resonator performance near the  
resonant frequency and is provided for reference only. The capacitance C  
O
Typically, f  
or f  
is less than the resonator f .  
TRANSMITTER C  
OSCILLATOR  
9.  
3.  
4.  
One or more of the following United States patents apply: 4,454,488 and  
4,616,197 and others pending.  
O
is the static (nonmotional) capacitance between pin1 and pin 2 measured  
at low frequency (10 MHz) with a capacitance meter. The measurement  
includes case parasitic capacitance with a floating case. For usual  
grounded case applications (with ground connected to either pin 1 or pin 2  
Typically, equipment designs utilizing this device require emissions testing  
and government approval, which is the responsibility of the equipment  
manufacturer.  
5.  
6.  
Unless noted otherwise, case temperature T = +25°C±2°C.  
C
and to the case), add approximately 0.25 pF to C .  
O
The design, manufacturing process, and specifications of this device are  
www.RFM.com E-mail: info@rfm.com  
©2009 by RF Monolithics, Inc.  
Page 1 of 2  
RO3103 (R) - 3/2/09  
12

中文翻译

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