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RO3102A-1

更新时间： 2024-02-28 14:06:14
品牌 Logo 应用领域
村田 - MURATA 晶体谐振器
页数 文件大小 规格书
2页 387K
描述
1-Port Saw Resonator, 423.22MHz Nom, ROHS COMPLIANT, CASE SM5035-4

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中文翻译

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RO3102A-1 技术参数

生命周期：Obsolete包装说明：ROHS COMPLIANT, CASE SM5035-4
Reach Compliance Code：unknown风险等级：5.83
晶体/谐振器类型：1-PORT频率稳定性：0.0115%
频率容差 (MHz)：0.05插入损耗：2 dB
安装特点：SURFACE MOUNT标称工作频率：423.22 MHz
最高工作温度：85 °C最低工作温度：-40 °C
并联电容：2.05 pF物理尺寸：L5.13XB3.63XH1.6 (mm)/L0.202XB0.143XH0.063 (inch)
表面贴装：YESBase Number Matches：1

RO3102A-1 数据手册

 浏览型号RO3102A-1的Datasheet PDF文件第2页 
RO3102A-1  
• Ideal for 433.92 MHz Superheterodyne Receiver LOs  
• Very Low Series Resistance  
• Quartz Stability  
• Surface-mount Ceramic Case  
• Complies with Directive 2002/95/EC (RoHS)  
423.22 MHz  
SAW  
Resonator  
Pb  
The RO3102A-1 is a true one-port, surface-acoustic-wave (SAW) resonator in a surface-mount, ceramic case.  
It provides reliable, fundamental-mode, quartz frequency stabilization of local oscillators operating at  
approximately 423.22 MHz. This SAW is designed for 433.92 MHz superhet receivers using a 10.7 MHz IF.  
Applications include remote-control and wireless security receivers operating in Europe under ETSI  
I-ETS 300 220.  
Absolute Maximum Ratings  
Rating  
Value  
+5  
Units  
dBm  
VDC  
°C  
CW RF Power Dissipation (See Typical Test Circuit)  
DC Voltage Between Terminals (Observe ESD Precautions)  
Case Temperature  
±30  
-40 to +85  
260  
Soldering Temperature (10 seconds / 5 cycles maximum.)  
°C  
SM5035-4  
Electrical Characteristics  
Characteristic  
Sym  
Notes  
2, 3, 4, 5  
2, 5, 6  
Minimum  
Typical  
Maximum  
423.270  
±50  
Units  
f
Frequency, +25 °C  
Nominal Frequency  
423.170  
MHz  
kHz  
dB  
C
∆f  
Tolerance from 423.220 MHz  
C
Insertion Loss  
Quality Factor  
IL  
1.0  
16,100  
1,800  
25  
2.0  
Q
Unloaded Q  
U
5, 6, 7  
Q
T
50 Ω Loaded Q  
L
Temperature Stability  
Turnover Temperature  
Turnover Frequency  
10  
1.0  
1.5  
40  
°C  
O
f
f
6, 7, 8  
O
C
2
Frequency Temperature Coefficient  
Absolute Value during the First Year  
FTC  
0.032  
10  
ppm/°C  
|f |  
Frequency Aging  
1, 6  
5
ppm/yr  
MΩ  
Ω
A
DC Insulation Resistance between Any Two Terminals  
R
RF Equivalent RLC Model  
Motional Resistance  
Motional Inductance  
Motional Capacitance  
Shunt Static Capacitance  
13  
87.8  
1.6  
1.8  
75  
M
L
5, 6, 7, 9  
µH  
M
C
fF  
M
C
5, 6, 9  
2, 7  
2.1  
pF  
O
L
Test Fixture Shunt Inductance  
Lid Symbolization  
nH  
TEST  
784  
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.  
Notes:  
1. Frequency aging is the change in f with time and is specified at  
are subject to change without notice.  
C
7. Derived mathematically from one or more of the following directly  
measured parameters: f , IL, 3 dB bandwidth, f versus T , and C .  
+65 °C or less. Aging may exceed the specification for prolonged tem-  
peratures above +65 °C. Typically, aging is greatest the first year after  
manufacture, decreasing in subsequent years.  
C
C
C
O
8. Turnover temperature, T , is the temperature of maximum (or  
O
2. The center frequency, f , is measured at the minimum insertion loss  
C
turnover) frequency, f . The nominal frequency at any case  
O
point, IL , with the resonator in the 50 Ω test system (VSWR ≤  
MIN  
2
temperature, T , may be calculated from: f = f [1 - FTC (T -T ) ].  
C
O
O
C
1.2:1). The shunt inductance, L  
, is tuned for parallel resonance  
TEST  
Typically oscillator T is approximately equal to the specified  
O
with C at f . Typically, f  
or f  
is approximately  
O
C
OSCILLATOR  
TRANSMITTER  
resonator T .  
O
equal to the resonator f .  
C
9. This equivalent RLC model approximates resonator performance near  
the resonant frequency and is provided for reference only. The  
3. One or more of the following United States patents apply: 4,454,488  
and 4,616,197.  
4. Typically, equipment utilizing this device requires emissions testing  
and government approval, which is the responsibility of the equipment  
manufacturer.  
capacitance C is the static (nonmotional) capacitance between the  
O
two terminals measured at low frequency (10 MHz) with a capacitance  
meter. The measurement includes parasitic capacitance with "NC”  
pads unconnected. Case parasitic capacitance is approximately  
0.05 pF. Transducer parallel capacitance can by calculated as:  
5. Unless noted otherwise, case temperature T = +25 ± 2 °C.  
C
6. The design, manufacturing process, and specifications of this device  
C
≈ C - 0.05 pF.  
P
O
www.RFM.com E-mail: info@rfm.com  
© 2008-2011 by RF Monolithics, Inc.  
Page 1 of 2  
RO3102A-1 - 6/29/11  
12

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