RO2166D
RO2166D-1
RO2166D-2
®
•
•
•
Ideal for European 857.65 MHz Transmitters
Very Low Series Resistance
Quartz Stability
Surface-Mount Ceramic Case with 21 mm2 Footprint
Complies with Directive 2002/95/EC (RoHS)
•
•
857.65 MHz
SAW
Resonator
Pb
The RO2166D is a true one-port, surface-acoustic-wave (SAW) resonator in a surface-mount ceramic case.
It provides reliable, fundamental-mode, quartz frequency stabilization of local oscillators operating at 857.65
MHz. This SAW is designed for 857.65 MHz superhet receivers with 10.7 MHz IF. Applications include
remote-control and wireless security receivers operating under ETSI-ETS 300 220 in Europe and under FTZ
17 TR 2100 in Germany.
Absolute Maximum Ratings
Rating
Value
Units
CW RF Power Dissipation
DC Voltage Between Terminals
Case Temperature
+0
dBm
±12
-40 to +85
260
VDC
°C
SM3838-6 Case
3.8 X 3.8
Soldering Temperature (10 seconds / 5 cycles max.)
°C
Electrical Characteristics
Characteristic
Nominal Frequency
Sym
Notes
Minimum
Typical
Maximum
857.725
857.800
857.750
±75
Units
Frequency (+25 °C)
RO2166D
857.575
857.500
857.550
2, 3, 4,
5
f
RO2166D-1
RO2166D-2
RO2166D
MHz
C
Tolerance from 857.65 MHz
Df
RO2166D-1
RO2166D-2
±150
±100
2.0
kHz
dB
C
Insertion Loss
Quality Factor
IL
2, 5, 6
5, 6, 7
1.1
1086
8474
30
Q
Unloaded Q
50 W Loaded Q
Turnover Temperature
Turnover Frequency
U
Q
L
T
Temperature Stability
15
1.0
2.1
45
°C
kHz
O
f
f
6, 7, 8
O
C
2
Frequency Temperature Coefficient
Absolute Value during the First Year
FTC
|fA|
0.032
10
ppm/°C
Frequency Aging
DC Insulation Resistance between Any Two Terminals
RF Equivalent RLC Model
1
5
ppm/yr
MW
W
R
Motional Resistance
Motional Inductance
Motional Capacitance
Transducer Static Capacitance
14.6
23
1.5
2.3
15.3
M
5, 6, 7,
9
L
µH
fF
pF
nH
M
C
M
C
5, 6, 9
2, 7
3.0
O
L
Test Fixture Shunt Inductance
TEST
Lid Symbolization (in addition to Lot and/or Date Codes)
483 / YWWS
Standard Reel Quantity
Reel Size 7 Inch
Reel Size 13 Inch
500 Pieces / Reel
3000 Pieces / Reel
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.
Notes:
1.
2.
Frequency aging is the change in fC with time and is specified at +65°C or less.
7.
8.
Derived mathematically from one or more of the following directly measured
parameters: fC, IL, 3 dB bandwidth, fC versus TC, and CO.
Turnover temperature, TO, is the temperature of maximum (or turnover) fre-
Aging may exceed the specification for prolonged temperatures above +65°C.
Typically, aging is greatest the first year after manufacture, decreasing in subse-
quent years.
quency, fO. The nominal frequency at any case temperature, TC, may be calcu-
The center frequency, fC, is measured at the minimum insertion loss point,
lated from: f = fO [1 - FTC (TO -TC)2]. Typically oscillator TO is approximately
equal to the specified resonator TO.
This equivalent RLC model approximates resonator performance near the reso-
nant frequency and is provided for reference only. The capacitance CO is the
static (nonmotional) capacitance between the two terminals measured at low
frequency (10 MHz) with a capacitance meter. The measurement includes para-
sitic capacitance with "NC” pads unconnected. Case parasitic capacitance is
approximately 0.05 pF. Transducer parallel capacitance can by calculated as:
ILMIN, with the resonator in the 50 W test system (VSWR £ 1.2:1). The shunt
inductance, LTEST, is tuned for parallel resonance with CO at fC. Typically, fOS-
CILLATOR or fTRANSMITTER is approximately equal to the resonator fC.
One or more of the following United States patents apply: 4,454,488 and
4,616,197.
Typically, equipment utilizing this device requires emissions testing and govern-
ment approval, which is the responsibility of the equipment manufacturer.
Unless noted otherwise, case temperature TC = +25°C±2°C.
The design, manufacturing process, and specifications of this device are subject
to change without notice.
9.
3.
4.
5.
6.
C
P » CO - 0.05 pF.
RF Monolithics, Inc.
RFM Europe
Phone: (972) 233-2903
Phone: 44 1963 251383
Fax: (972) 387-8148
Fax: 44 1963 251510
E-mail: info@rfm.com
http://www.rfm.com
RO2166D-090503
Page 1 of 2
©1999 by RF Monolithics, Inc. The stylized RFM logo are registered trademarks of RF Monolithics, Inc.
5秒后页面跳转
英伟达新AI芯片Rubin或提前半年亮相
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
三星深化印度制造布局，供应链本地化进程加速
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
