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RO2165A PDF预览

RO2165A

更新时间: 2024-01-08 09:10:03
品牌 Logo 应用领域
RFM 晶体谐振器
页数 文件大小 规格书
2页 97K
描述
858.25 MHz SAW Resonator

RO2165A 技术参数

生命周期:Obsolete包装说明:ROHS COMPLIANT, CERAMIC, CASE SM-2, 4 PIN
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N晶体/谐振器类型:1-PORT
频率容差 (MHz):0.075插入损耗:2 dB
JESD-609代码:e4安装特点:SURFACE MOUNT
标称工作频率:858.25 MHz并联电容:3.15 pF
物理尺寸:L5.99XB3.99XH2.29 (mm)/L0.236XB0.157XH0.09 (inch)表面贴装:YES
端子面层:GOLDBase Number Matches:1

RO2165A 数据手册

 浏览型号RO2165A的Datasheet PDF文件第2页 
RO2165A  
RO2165A-1  
RO2165A-2  
®
Ideal for European 858.25 MHz Transmitters  
Very Low Series Resistance  
Quartz Stability  
Surface-Mount Ceramic Case with 21 mm2 Footprint  
Complies with Directive 2002/95/EC (RoHS)  
858.25 MHz  
SAW  
Resonator  
The RO2165A is a true one-port, surface-acoustic-wave (SAW) resonator in a surface-mount ceramic case.  
It provides reliable, fundamental-mode, quartz frequency stabilization of local oscillators operating at 858.25  
MHz. This SAW is designed for remote-control and wireless security receivers operating under ETSI-ETS  
300 220 in Europe and under FTZ 17 TR 2100 in Germany  
Absolute Maximum Ratings  
Rating  
Value  
+0  
Units  
dBm  
VDC  
°C  
CW RF Power Dissipation  
DC Voltage Between Terminals  
Case Temperature  
±30  
-40 to +85  
260  
SM-2 Case  
Soldering Temperature (10 seconds / 5 cycles max.)  
°C  
Electrical Characteristics  
Characteristic  
Frequency (+25 °C) Nominal Frequency RO2165A  
RO2165A-1  
Sym  
Notes  
Minimum  
858.175  
858.175  
858.150  
Typical  
Maximum  
858.325  
858.475  
858.350  
±75  
Units  
f
MHz  
C
RO2165A-2  
2, 3, 4, 5  
Tolerance from 858.25 MHz  
RO2165A  
RO2165A-1  
RO2165A-2  
Df  
-75  
+225  
kHz  
dB  
C
±100  
1.1  
Insertion Loss  
IL  
2, 5, 6  
5, 6, 7  
2.0  
45  
Q
Quality Factor  
Unloaded Q  
38,997  
4,000  
30  
U
Q
T
50 W Loaded Q  
L
Temperature Stability  
Turnover Temperature  
15  
1.0  
2.6  
°C  
O
f
f
Turnover Frequency  
6, 7, 8  
O
C
2
Frequency Temperature Coefficient  
Absolute Value during the First Year  
FTC  
|fA|  
0.032  
10  
ppm/°C  
Frequency Aging  
1
5
ppm/yr  
MW  
W
DC Insulation Resistance between Any Two Terminals  
R
RF Equivalent RLC Model  
Motional Resistance  
Motional Inductance  
Motional Capacitance  
Shunt Static Capacitance  
11  
M
L
5, 7, 9, 6  
82.654  
0.4161  
2.9  
µH  
M
C
fF  
M
C
5, 6, 9  
2, 7  
3.2  
pF  
O
L
Test Fixture Shunt Inductance  
11.8581  
nH  
TEST  
Lid Symbolization (in Addition to Lot and/ or Date Code)  
261  
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.  
Notes:  
1.  
2.  
Frequency aging is the change in f with time and is specified at +65°C or less. Aging may  
C
exceed the specification for prolonged temperatures above +65°C. Typically, aging is great-  
est the first year after manufacture, decreasing in subsequent years.  
7.  
Derived mathematically from one or more of the following directly measured parameters: f ,  
C
IL, 3 dB bandwidth, f versus T , and C .  
C C O  
8.  
Turnover temperature, T , is the temperature of maximum (or turnover) frequency, f . The  
O
O
The center frequency, f , is measured at the minimum insertion loss point, IL , with the res-  
C
MIN  
nominal frequency at any case temperature, T , may be calculated from: f = f [1 - FTC (T -  
C
O
O
onator in the 50 W test system (VSWR £ 1.2:1). The shunt inductance, L  
, is tuned for par-  
TEST  
2
T ) ]. Typically oscillator T is approximately equal to the specified resonator T .  
O
C
O
allel resonance with C at f . Typically, f  
or f  
is approximately equal  
TRANSMITTER  
O
C
OSCILLATOR  
9.  
This equivalent RLC model approximates resonator performance near the resonant fre-  
quency and is provided for reference only. The capacitance C is the static (nonmotional)  
to the resonator f .  
C
O
3.  
4.  
One or more of the following United States patents apply: 4,454,488 and 4,616,197.  
Typically, equipment utilizing this device requires emissions testing and government  
approval, which is the responsibility of the equipment manufacturer.  
capacitance between the two terminals measured at low frequency (10 MHz) with a capaci-  
tance meter. The measurement includes parasitic capacitance with "NC” pads unconnected.  
Case parasitic capacitance is approximately 0.05 pF. Transducer parallel capacitance can by  
calculated as: C » C - 0.05 pF.  
5.  
6.  
Unless noted otherwise, case temperature T = +25°C±2°C.  
C
P
O
The design, manufacturing process, and specifications of this device are subject to change  
without notice.  
RF Monolithics, Inc.  
RFM Europe  
Phone: (972) 233-2903  
Phone: 44 1963 251383  
Fax: (972) 387-8148  
Fax: 44 1963 251510  
E-mail: info@rfm.com  
http://www.rfm.com  
Page 1 of 2  
©1999 by RF Monolithics, Inc. The stylized RFM logo are registered trademarks of RF Monolithics, Inc.  
RO2165A_RO2165A-1_RO2165A-2_071001  

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