RO2100
• Ideal for 295 MHz Oscillators
• Low Series Resistance
• Quartz Stability
• Rugged, Hermetic, Low-Profile TO39 Case
• Complies with Directive 2002/95/EC (RoHS)
295.05 MHz
SAW
Pb
Resonator
The RO2100 is a true one-port, surface-acoustic-wave (SAW) resonator in a low-profile TO39 case. It
provides reliable, fundamental-mode, quartz frequency stabilization of fixed-frequency oscillators operating at
295.05 MHz.
Absolute Maximum Ratings
Rating
Value
+5
Units
dBm
VDC
°C
CW RF Power Dissipation
DC Voltage Between Terminals
Case Temperature
±30
-40 to +85
260
TO39-3 Case
Soldering Temperature (10 seconds / 5 cycles MAX)
°C
Electrical Characteristics
Characteristic
Sym
Notes
Minimum
Typical
Maximum
Units
Center Frequency at +25 °C
Absolute Frequency
f
294.950
295.150
MHz
kHz
dB
C
2, 3, 4, 5
Tolerance from 295.05 MHz
Δf
±100
7.0
C
Insertion Loss
Quality Factor
IL
3.1
13,000
3,900
45
2, 5, 6
5, 6, 7
Unloaded Q
Q
U
50 Ω Loaded Q
Q
L
Temperature Stability
Turnover Temperature
Turnover Frequency
T
f
30
1.0
1.9
57
°C
O
f
+ .004
6, 7, 8
kHz
O
C
2
Frequency Temperature Coefficient
Absolute Value during the First Year
FTC
0.032
ppm/°C
Frequency Aging
|fA|
±10
78
ppm/yr
MΩ
Ω
1
5
DC Insulation Resistance between Pin 1 and Pin 2
RF Equivalent RLC Model
Motional Resistance
R
43
M
Motional Inductance
L
309.913
0.93888
2.2
µH
fF
5, 6, 7, 9
M
Motional Capacitance
C
M
Pin 1 to Pin 2 Static Capacitance
Transducer Static Capacitance
C
5, 6, 9
5, 6, 7, 9
2, 7
2.5
pF
O
C
2.4
pF
P
Test Fixture Shunt Inductance
Lid Symbolization
L
121
nH
TEST
RFM RO2100
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.
Notes:
1. Lifetime (10 year) frequency aging.
7. Derived mathematically from one or more of the following directly
measured parameters: f , IL, 3 dB bandwidth, f versus T , and C .
2. The center frequency, f , is measured at the minimum insertion loss
C
C
C
C
O
point, IL , with the resonator in the 50 W test system (VSWR ≤
8. Turnover temperature, T , is the temperature of maximum (or
MIN
O
1.2:1). The shunt inductance, L
, is tuned for parallel resonance
turnover) frequency, f . The nominal frequency at any case
TEST
O
2
with C at f .
O
C
temperature, T , may be calculated from: f = f [1 - FTC (T -T ) ].
C
O
O
C
3. One or more of the following United States patents apply: 4,454,488
and 4,616,197.
4. Typically, equipment utilizing this device requires emissions testing
and government approval, which is the responsibility of the equipment
manufacturer.
5. Unless noted otherwise, case temperature T = +25°C±2°C.
6. The design, manufacturing process, and specifications of this device
are subject to change without notice.
9. This equivalent RLC model approximates resonator performance near
the resonant frequency and is provided for reference only. The
capacitance C is the static (nonmotional) capacitance between Pin 1
O
and Pin 2 measured at low frequency (10 MHz) with a capacitance
meter. The measurement includes parasitic capacitance with a floating
case. Case parasitic capacitance is approximately 0.25pF. Transducer
C
parallel capacitance can be calculated as: C ª C - 0.25 pF.
P
O
www.RFM.com
E-mail: info@rfm.com
Page 1 of 2
©2008 by RF Monolithics, Inc.
RO2100 - 3/25/08
5秒后页面跳转
AO3401场效应管参数、引脚图、应用原理图
BT131可控硅参数及引脚图、工作原理详解
74LS32芯片参数、引脚图及功能真值表
全球首块英伟达H200交付 黄仁勋“送货上门”
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
技术参数
数据手册
如果您发现信息不准确，
