5秒后页面跳转
RN46A1(TE85L) PDF预览

RN46A1(TE85L)

更新时间: 2024-01-24 17:14:59
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 230K
描述
RN46A1(TE85L)

RN46A1(TE85L) 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:NBase Number Matches:1

RN46A1(TE85L) 数据手册

 浏览型号RN46A1(TE85L)的Datasheet PDF文件第2页浏览型号RN46A1(TE85L)的Datasheet PDF文件第3页浏览型号RN46A1(TE85L)的Datasheet PDF文件第4页浏览型号RN46A1(TE85L)的Datasheet PDF文件第5页浏览型号RN46A1(TE85L)的Datasheet PDF文件第6页 
RN46A1  
TOSHIBA Transistor  
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)  
RN46A1  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
Unit in mm  
z Including two devices in SM6 (super mini type with 6 leads)  
z With built-in bias resistors  
z Simplify circuit design  
z Reduce a quantity of parts and manufacturing process  
Equivalent Circuit and Bias Resister Values  
Q1  
Q2  
R1: 22kΩ  
R2: 22kΩ  
R1: 10kΩ  
R2: 10kΩ  
Q1: RN2403 Equivalent  
Q2: RN1402 Equivalent  
JEDEC  
Q1 Absolute Maximum Ratings (Ta = 25°C)  
JEITA  
SC-74  
2-3N1A  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
TOSHIBA  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
Weight: 0.015g (typ.)  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
10  
V
I
100  
mA  
C
Q2 Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
10  
V
I
100  
mA  
C
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector power dissipation  
Junction temperature  
P
*
300  
150  
mW  
°C  
C
T
j
Storage temperature range  
T
55~150  
°C  
stg  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
* : Total rating  
1
2007-11-01  

与RN46A1(TE85L)相关器件

型号 品牌 获取价格 描述 数据表
RN47A1 TOSHIBA

获取价格

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN47A1(TE85L,F) TOSHIBA

获取价格

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353
RN47A1_07 TOSHIBA

获取价格

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN47A1JE TOSHIBA

获取价格

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN47A1JE(TE85L) TOSHIBA

获取价格

RN47A1JE(TE85L)
RN47A1JE(TE85L,F) TOSHIBA

获取价格

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR
RN47A1JE(TPL3) TOSHIBA

获取价格

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR
RN47A2 TOSHIBA

获取价格

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN47A2(TE85L) TOSHIBA

获取价格

RN47A2(TE85L)
RN47A2(TE85L,F) TOSHIBA

获取价格

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353