Datasheet > RN4611TE85R

RN4611TE85R

更新时间： 2024-01-10 08:17:01

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
6页	306K
描述
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

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中文翻译

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技术参数
数据手册

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RN4611TE85R 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.8	最大集电极电流 (IC)：	0.1 A
基于收集器的最大容量：	6 pF	集电极-发射极最大电压：	50 V
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	120
JESD-30 代码：	R-PDSO-G6	元件数量：	2
端子数量：	6	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN AND PNP
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	250 MHz	VCEsat-Max：	0.3 V
Base Number Matches：	1

RN4611TE85R 数据手册

RN4611

TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process)

(Transistor with Built-in Bias Resistor)

RN4611

Unit: mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

z Including two devices in SM6 (super mini type with 6 leads)

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

Equivalent Circuit

R1: 10kΩ

(Q1, Q2 Common)

JEDEC

―

JEITA

Q1 Absolute Maximum Ratings (Ta = 25°C)

TOSHIBA

2-3N1A

Weight: 15 mg (typ.)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

−5

Collector-emitter voltage

Emitter-base voltage

Collector current

−100

Q2 Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

100

2010-10-04

12 3 4 5 6

中文翻译

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