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RN4607 PDF预览

RN4607

更新时间: 2024-09-20 22:23:43
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体小信号双极晶体管开关光电二极管PC
页数 文件大小 规格书
5页 155K
描述
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

RN4607 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:2-3N1A, 6 PIN
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.53Is Samacsys:N
其他特性:BUILT-IN RESISTOR RATIO IS 4.7最大集电极电流 (IC):0.1 A
基于收集器的最大容量:6 pF集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JESD-30 代码:R-PDSO-G6元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN AND PNP最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzVCEsat-Max:0.3 V
Base Number Matches:1

RN4607 数据手册

 浏览型号RN4607的Datasheet PDF文件第2页浏览型号RN4607的Datasheet PDF文件第3页浏览型号RN4607的Datasheet PDF文件第4页浏览型号RN4607的Datasheet PDF文件第5页 
                                                                     
                                                                     
                                                                     
                                                                     
RN4607  
TOSHIBA Transistor  
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)  
RN4607  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
Unit in mm  
l Includeing two devices in SM6 (super mini type with 6 leads)  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
Equivalent Circuit and Bias Resister Values  
R1: 10k  
R2: 47kΩ  
(Q1, Q2 Common)  
Q1 Maximum Ratings (Ta = 25°C)  
JEDEC  
EIAJ  
TOSHIBA  
Weight: 0.015g  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
6  
V
V
2-3N1A  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
100  
mA  
C
Q2 Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
6
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
100  
mA  
C
1
2001-06-05  

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