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RN4606 PDF预览

RN4606

更新时间： 2024-01-30 02:02:12
品牌 Logo 应用领域
东芝 - TOSHIBA PC
页数 文件大小 规格书
4页 153K
描述
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

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中文翻译

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RN4606 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Active包装说明：2-3N1A, 6 PIN
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.51其他特性：BUILT-IN RESISTOR RATIO IS 10
最大集电极电流 (IC)：0.1 A基于收集器的最大容量：6 pF
集电极-发射极最大电压：50 V配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：80JESD-30 代码：R-PDSO-G6
元件数量：2端子数量：6
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN AND PNP
最大功率耗散 (Abs)：0.3 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：250 MHz
VCEsat-Max：0.3 VBase Number Matches：1

RN4606 数据手册

 浏览型号RN4606的Datasheet PDF文件第2页浏览型号RN4606的Datasheet PDF文件第3页浏览型号RN4606的Datasheet PDF文件第4页 
                                                                     
                                                                     
                                                                     
                                                                     
RN4606  
TOSHIBA Transistor  
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)  
RN4606  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
Unit in mm  
l Including two devices in SM6 (super mini type with 6 leads)  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
Equivalent Circuit and Bias Resister Values  
R1: 4.7kΩ  
R2: 47kΩ  
(Q1, Q2 Common)  
Q1 Maximum Ratings (Ta = 25°C)  
JEDEC  
―
EIAJ  
TOSHIBA  
Weight: 0.015g  
―
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
2-3N1A  
V
CBO  
V
CEO  
V
EBO  
−50  
−50  
−5  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
−100  
mA  
C
Q2 Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
5
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
100  
mA  
C
000707EAA2  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general  
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the  
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and  
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or  
damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the  
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling  
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal  
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are  
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or  
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy  
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control  
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document  
shall be made at the customer’s own risk.  
2001-02-08 1/4  
1234

中文翻译

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与RN4606相关器件

型号 品牌 获取价格 描述 数据表
RN4606(TE85L) TOSHIBA

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 		TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A,
RN4606(TE85R) TOSHIBA

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 		TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A,
RN4606_07 TOSHIBA

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 		Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
RN4606TE85L TOSHIBA

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 		TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General
RN4606TE85N TOSHIBA

获取价格

 		TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General
RN4606TE85R TOSHIBA

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 		TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General
RN4607 TOSHIBA

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 		TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PC
RN4607(TE85R) TOSHIBA

获取价格

 		TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A,
RN4607TE85N TOSHIBA

获取价格

 		TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General
RN4607TE85R TOSHIBA

获取价格

 		TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General

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