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RN2509 PDF预览

RN2509

更新时间: 2024-02-11 07:28:45
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关晶体管光电二极管驱动
页数 文件大小 规格书
6页 175K
描述
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2509 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:2-3L1A, 5 PIN
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.55其他特性:BUILT-IN RESISTOR RATIO IS 0.47
最大集电极电流 (IC):0.1 A基于收集器的最大容量:6 pF
集电极-发射极最大电压:50 V配置:COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):70JESD-30 代码:R-PDSO-G5
JESD-609代码:e0元件数量:2
端子数量:5最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
VCEsat-Max:0.3 VBase Number Matches:1

RN2509 数据手册

 浏览型号RN2509的Datasheet PDF文件第2页浏览型号RN2509的Datasheet PDF文件第3页浏览型号RN2509的Datasheet PDF文件第4页浏览型号RN2509的Datasheet PDF文件第5页浏览型号RN2509的Datasheet PDF文件第6页 
                                                               
                                                               
RN2507~RN2509  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
RN2507,RN2508,RN2509  
And Driver Circuit Applications  
Switching, Inverter Circuit, Interface Circuit  
Unit in mm  
l Including two devices in SMV (super mini type with 5 leads)  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN1507~RN1509  
Equivalent Circuit and Bias Resistor Values  
Type No. R1 (k)  
R2 (k)  
RN2507  
RN2508  
RN2509  
10  
22  
47  
47  
47  
22  
JEDEC  
EIAJ  
2-3L1A  
TOSHIBA  
Weight: 0.014g  
Equivalent Circuit (Top View)  
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN2507~RN2509  
Collector-emitter voltage  
RN2507  
RN2508  
RN2509  
6  
Emitter-base voltage  
V
V
7  
EBO  
15  
Collector current  
I
100  
300  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P *  
C
RN2507~RN2509  
T
150  
j
T
55~150  
°C  
stg  
*
Total rating  
1
2001-06-05  

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