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RN2501 PDF预览

RN2501

更新时间: 2024-11-10 22:43:51
品牌 Logo 应用领域
东芝 - TOSHIBA 开关驱动
页数 文件大小 规格书
7页 271K
描述
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2501 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G5
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.72其他特性:BUILT-IN RESISTOR RATIO IS 1
最大集电极电流 (IC):0.1 A基于收集器的最大容量:6 pF
集电极-发射极最大电压:50 V配置:COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-G5
元件数量:2端子数量:5
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
VCEsat-Max:0.3 VBase Number Matches:1

RN2501 数据手册

 浏览型号RN2501的Datasheet PDF文件第2页浏览型号RN2501的Datasheet PDF文件第3页浏览型号RN2501的Datasheet PDF文件第4页浏览型号RN2501的Datasheet PDF文件第5页浏览型号RN2501的Datasheet PDF文件第6页浏览型号RN2501的Datasheet PDF文件第7页 
                                                               
                                                               
RN2501~RN2506  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
RN2501,RN2502,RN2503  
RN2504,RN2505,RN2506  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
l Including two devices in SMV (super mini type with 5 leads)  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN1501~RN1506  
Equivalent Circuit and Bias Resistor Values  
Type No. R1 (k)  
R2 (k)  
RN2501  
RN2502  
RN2503  
RN2504  
RN2505  
RN2506  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
JEDEC  
22  
EIAJ  
47  
TOSHIBA  
Weight: 0.014g  
2-3L1A  
2.2  
4.7  
Equivalent Circuit (Top View)  
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN2501~2506  
Collector-emitter voltage  
RN2501~2504  
RN2505, 2506  
10  
Emitter base voltage  
V
V
EBO  
5  
Collector current  
I
100  
300  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P *  
C
RN2501~2506  
Tj  
150  
Tstg  
55~150  
°C  
*
Total rating  
1
2001-06-07  

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