Datasheet > RN2427TE85LF

RN2427TE85LF

更新时间： 2024-01-03 05:09:05

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东芝 - TOSHIBA		/
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数据手册

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RN2427TE85LF 数据手册

RN2421~RN2427

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2421, RN2422, RN2423, RN2424

RN2425, RN2426, RN2427

Switching, Inverter Circuit, Interface Circuit

Unit: mm

and Driver Circuit Applications

High current type (I

= −800mA)

C(MAX)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Low V

CE (sat)

Complementary to RN1421 to RN1427

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2421

RN2422

RN2423

RN2424

RN2425

RN2426

RN2427

2.2

4.7

2.2

4.7

JEDEC

JEITA

―

0.47

SC-59

2-3F1A

TOSHIBA

2.2

Weight: 0.012 g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-Base voltage

Symbol

Rating

Unit

−50

CBO

CEO

RN2421 to 2427

Collector-Emitter voltage

RN2421 to 2424

RN2425, 2426

RN2427

−10

Emitter-Base voltage

−5

EBO

−6

Collector current

−800

200

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN2421 to 2427

150

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

1988-02

2014-03-01

12 3 4 5 6 7 8

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