Datasheet > RN2423(T5LCK,F)

RN2423(T5LCK,F)

更新时间： 2024-09-24 20:56:59

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
8页	573K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

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中文翻译

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技术参数
数据手册

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RN2423(T5LCK,F) 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	unknown	风险等级：	5.84
其他特性：	BUILT IN BIAS RESISTANCE RATIO IS 1	最大集电极电流 (IC)：	0.8 A
集电极-发射极最大电压：	50 V	配置：	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	70	JESD-30 代码：	R-PDSO-G3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	PNP
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	200 MHz
Base Number Matches：	1

RN2423(T5LCK,F) 数据手册

RN2421~RN2427

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2421, RN2422, RN2423, RN2424

RN2425, RN2426, RN2427

Switching, Inverter Circuit, Interface Circuit

Unit: mm

and Driver Circuit Applications

High current type (I

= −800mA)

C(MAX)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Low V

CE (sat)

Complementary to RN1421 to RN1427

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2421

RN2422

RN2423

RN2424

RN2425

RN2426

RN2427

2.2

4.7

2.2

4.7

JEDEC

JEITA

―

0.47

SC-59

2-3F1A

TOSHIBA

2.2

Weight: 0.012 g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-Base voltage

Symbol

Rating

Unit

−50

CBO

CEO

RN2421 to 2427

Collector-Emitter voltage

RN2421 to 2424

RN2425, 2426

RN2427

−10

Emitter-Base voltage

−5

EBO

−6

Collector current

−800

200

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN2421 to 2427

150

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

1988-02

2014-03-01

12 3 4 5 6 7 8

中文翻译

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与RN2423(T5LCK,F)相关器件

型号	品牌	获取价格	描述	数据表
RN2423(TE85L)	TOSHIBA	获取价格	TRANSISTOR 800 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP Gener
RN2423(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,800MA I(C),SC-59
RN2423(TE85L2)	TOSHIBA	获取价格	TRANSISTOR 800 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP Gener
RN2423(TE85R)	TOSHIBA	获取价格	TRANSISTOR 800 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP Gener
RN2423(TE85R2)	TOSHIBA	获取价格	TRANSISTOR 800 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP Gener
RN2424	TOSHIBA	获取价格	PNP EPITAXIAL TYPE (SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPL
RN2424(TE85L)	TOSHIBA	获取价格	TRANSISTOR 800 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP Gener
RN2424(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,800MA I(C),SC-59
RN2424(TE85L2)	TOSHIBA	获取价格	TRANSISTOR 800 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP Gener
RN2424(TE85R)	TOSHIBA	获取价格	TRANSISTOR 800 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP Gener

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