Datasheet > RN16J1

RN16J1

更新时间： 2024-09-24 20:53:07

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
3页	178K
描述
TRANSISTOR 500 mA, 12 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN, BIP General Purpose Small Signal

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RN16J1 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G6
针数：	6	Reach Compliance Code：	unknown
风险等级：	5.83	其他特性：	BUILT-IN BIAS RESISTOR
最大集电极电流 (IC)：	0.5 A	集电极-发射极最大电压：	12 V
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	300
JESD-30 代码：	R-PDSO-G6	元件数量：	2
端子数量：	6	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	300 MHz	Base Number Matches：	1

RN16J1 数据手册

RN16J1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN16J1

Muting Applications

Switching Applications

Unit in mm

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Equivalent Circuit

1.BASE1

(B1)

(E1)

2.EMITTER1

3.COLLECTOR2 (C2)

4.BASE2

(B2)

(E2)

5.EMITTER2

6.COLECTOR1 (C1)

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 common)

JEDEC

JEITA

―

Characteristic

Collector-base voltage

Symbol

Rating

Unit

2-3N1A

TOSHIBA

CBO

Weight: 15 mg (typ.)

Collector-emitter voltage

Emitter-base voltage

CEO

EBO

Collector current

500

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note1)

300

150

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note1: Total rating

Marking

Equivalent Circuit (top view)

2009-04-14

12 3

中文翻译

下载PDF

与RN16J1相关器件

型号	品牌	获取价格	描述	数据表
RN16J1(TE85L)	TOSHIBA	获取价格	RN16J1(TE85L)
RN16J1(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,12V V(BR)CEO,500MA I(C),TSOP
RN1701	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1701(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN,
RN1701(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353
RN1701-11	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, USV, 5 PIN, BIP Gene
RN1701JE	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1701JE(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR
RN1701JE(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR
RN1702	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

与RN16J1相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

7
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

13
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

80
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

71

产品中心

服务支持

精选活动

关于我们

帮助中心

RN16J1

RN16J1 技术参数

RN16J1 数据手册

与RN16J1相关器件

与RN16J1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RN16J1

RN16J1 技术参数

RN16J1 数据手册

与RN16J1相关器件

与RN16J1相关文章

您还可以找

您在本页遇到什么问题？