Datasheet > RN1321A(TE85L,F)

RN1321A(TE85L,F)

更新时间： 2024-09-23 19:55:23

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
11页	191K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,12V V(BR)CEO,500MA I(C),SC-70

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RN1321A(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	最大集电极电流 (IC)：	0.5 A
最小直流电流增益 (hFE)：	35	元件数量：	1
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.1 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN1321A(TE85L,F) 数据手册

RN1321A∼RN1327A

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1321A,RN1322A,RN1323A,RN1324A

RN1325A,RN1326A,RN1327A

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

z High current driving is possible.

z Since bias resisters are built in the transistor,the miniaturization of the

apparatus by curtailment of the number of parts and laborsaving of an

assembly are possible.

z Many kinds of resistance value are lined up in order to support various

kinds of circuit design.

z Complementary to RN2321A to RN2327A

z Low V

enable to be low power dissipation on high current driving.

CE(sat)

Equivalent Circuit And Bias Resistance Values

Type No.

R1 (kΩ)

R2 (kΩ)

1. BASE

2. EMITTER

3. COLLECTOR

RN1321A

RN1322A

RN1323A

RN1324A

RN1325A

RN1326A

RN1327A

2.2

4.7

2.2

4.7

JEDEC

⎯

JEITA

SC-70

2-2E1A

0.47

TOSHIBA

Weight: 6 mg (typ.)

2.2

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

CBO

CEO

RN1321A to 1327A

Collector-emitter voltage

Emitter-base voltage

RN1321A to 1324A

RN1325A, 1326A

RN1327A

EBO

Collector current

500

°C

Collector power dissipation

Junction temperature

Storage temperature range

100

RN1321A to 1327A

150

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-04-06

12 3 4 5 6 7...11

中文翻译

下载PDF

与RN1321A(TE85L,F)相关器件

型号	品牌	获取价格	描述	数据表
RN1322A	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1322A(TE85L,F)	TOSHIBA	获取价格	暂无描述
RN1323A	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1324A	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1324A(TE85L)	TOSHIBA	获取价格	RN1324A(TE85L)
RN1324A(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,12V V(BR)CEO,500MA I(C),SC-70
RN1325A	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1325A(TE85L)	TOSHIBA	获取价格	RN1325A(TE85L)
RN1326A	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1326A(TE85L)	TOSHIBA	获取价格	RN1326A(TE85L)

与RN1321A(TE85L,F)相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

4
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

6
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

78
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

68

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1321A(TE85L,F)

RN1321A(TE85L,F) 技术参数

RN1321A(TE85L,F) 数据手册

与RN1321A(TE85L,F)相关器件

与RN1321A(TE85L,F)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1321A(TE85L,F)

RN1321A(TE85L,F) 技术参数

RN1321A(TE85L,F) 数据手册

与RN1321A(TE85L,F)相关器件

与RN1321A(TE85L,F)相关文章

您还可以找

您在本页遇到什么问题？