5秒后页面跳转
RN1314(TE85L,F) PDF预览

RN1314(TE85L,F)

更新时间: 2024-09-23 15:49:47
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
8页 456K
描述
TRANSISTOR NPN 50V 0.1A SC-70

RN1314(TE85L,F) 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.75
Base Number Matches:1

RN1314(TE85L,F) 数据手册

 浏览型号RN1314(TE85L,F)的Datasheet PDF文件第2页浏览型号RN1314(TE85L,F)的Datasheet PDF文件第3页浏览型号RN1314(TE85L,F)的Datasheet PDF文件第4页浏览型号RN1314(TE85L,F)的Datasheet PDF文件第5页浏览型号RN1314(TE85L,F)的Datasheet PDF文件第6页浏览型号RN1314(TE85L,F)的Datasheet PDF文件第7页 
RN1314RN1318  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1314, RN1315, RN1316  
RN1317, RN1318  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
z With built-in bias resistors  
z Simplify circuit design  
z Reduce a quantity of parts and manufacturing process  
z Complementary to RN2314 to RN2318  
Equivalent Circuit and Bias Resister Values  
Type No.  
R1 (k)  
R2 (k)  
RN1314  
RN1315  
RN1316  
RN1317  
RN1318  
1
10  
10  
10  
4.7  
10  
2.2  
4.7  
10  
47  
JEDEC  
JEITA  
SC-70  
2-2E1A  
TOSHIBA  
Weight: 0.006g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
V
V
CBO  
CEO  
RN1314 to 1318  
Collector-emitter voltage  
50  
RN1314  
RN1315  
RN1316  
RN1317  
RN1318  
5
6
7
Emitter-base voltage  
V
V
EBO  
15  
25  
Collector current  
I
100  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
C
RN1314 to 1318  
T
150  
j
T
stg  
55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Start of commercial production  
2002-11  
1
2014-03-01  

RN1314(TE85L,F) 替代型号

型号 品牌 替代类型 描述 数据表
DDTC113ZUA-7 DIODES

功能相似

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC

与RN1314(TE85L,F)相关器件

型号 品牌 获取价格 描述 数据表
RN1314(TE85L2) TOSHIBA

获取价格

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP
RN1314(TE85R) TOSHIBA

获取价格

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP
RN1315 TOSHIBA

获取价格

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1315(TE85L) TOSHIBA

获取价格

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP
RN1315(TE85L,F) TOSHIBA

获取价格

TRANSISTOR NPN 50V 0.1A SC-70
RN1315(TE85L2) TOSHIBA

获取价格

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP
RN1315(TE85R) TOSHIBA

获取价格

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP
RN1316 TOSHIBA

获取价格

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1316(TE85L) TOSHIBA

获取价格

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP
RN1316(TE85L,F) TOSHIBA

获取价格

TRANSISTOR NPN 50V 0.1A SC-70