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RN1313(TE85L,F) PDF预览

RN1313(TE85L,F)

更新时间： 2024-09-23 15:49:47
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 282K
描述
TRANSISTOR NPN 50V 0.1A SC-70

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中文翻译

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RN1313(TE85L,F) 技术参数

是否Rohs认证：符合生命周期：Active
Reach Compliance Code：unknownFactory Lead Time：16 weeks
风险等级：5.72Is Samacsys：N
Base Number Matches：1

RN1313(TE85L,F) 数据手册

 浏览型号RN1313(TE85L,F)的Datasheet PDF文件第2页浏览型号RN1313(TE85L,F)的Datasheet PDF文件第3页浏览型号RN1313(TE85L,F)的Datasheet PDF文件第4页浏览型号RN1313(TE85L,F)的Datasheet PDF文件第5页 
RN1312,RN1313  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1312, RN1313  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
z With built-in bias resistors  
Unit: mm  
z Simplify circuit design  
z Reduce a quantity of parts and manufacturing process  
z Complementary to RN2312, RN2313  
Equivalent Circuit  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-base voltage  
V
V
V
50  
50  
V
V
CBO  
CEO  
EBO  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
JEDEC  
―
5
V
JEITA  
SC-70  
2-2E1A  
TOSHIBA  
I
100  
mA  
mA  
mW  
°C  
°C  
C
Weight: 0.006g (typ.)  
Base current  
I
100  
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
150  
C
T
125  
j
T
−55 to 125  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 50V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
―
V
V
V
―
―
―
―
100  
100  
700  
0.3  
―
nA  
nA  
CBO  
CB  
EB  
CE  
E
I
―
= 5V, I = 0  
C
EBO  
DC current gain  
h
―
= 5V, I = 1mA  
120  
―
―
FE  
C
Collector-emitter saturation voltage  
Transition frequency  
V
―
I
= 5mA, I = 0.25mA  
C B  
0.1  
250  
3
V
CE (sat)  
f
V
V
= 10V, I = 5mA  
―
―
MHz  
pF  
T
CE  
C
Collector output capacitance  
C
= 10V, I = 0, f = 1MHz  
CB E  
6
―
―
ob  
RN1312  
Input resistor  
15.4  
32.9  
22  
47  
28.6  
61.1  
R1  
―
―
kΩ  
RN1313  
Start of commercial production  
1998-02  
1
2014-03-01  
12345

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