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RN1312(TE85R) PDF预览

RN1312(TE85R)

更新时间： 2024-11-16 15:49:47
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
5页 282K
描述
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal

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中文翻译

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RN1312(TE85R) 技术参数

生命周期：Obsolete零件包装代码：SC-70
包装说明：SMALL OUTLINE, R-PDSO-G3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：5.78
其他特性：BUILT-IN BIAS RESISTOR最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：120JESD-30 代码：R-PDSO-G3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：250 MHzBase Number Matches：1

RN1312(TE85R) 数据手册

 浏览型号RN1312(TE85R)的Datasheet PDF文件第2页浏览型号RN1312(TE85R)的Datasheet PDF文件第3页浏览型号RN1312(TE85R)的Datasheet PDF文件第4页浏览型号RN1312(TE85R)的Datasheet PDF文件第5页 
RN1312,RN1313  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1312,RN1313  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
z With built-in bias resistors  
Unit: mm  
z Simplify circuit design  
z Reduce a quantity of parts and manufacturing process  
z Complementary to RN2312, RN2313  
Equivalent Circuit  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
JEDEC  
―
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
JEITA  
SC-70  
5
V
TOSHIBA  
2-2E1A  
I
100  
mA  
mA  
mW  
°C  
°C  
Weight: 0.006g (typ.)  
C
Base current  
I
100  
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
150  
C
T
j
125  
T
stg  
−55~125  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 50V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
―
V
V
V
―
―
―
―
100  
100  
700  
0.3  
―
nA  
nA  
CBO  
CB  
EB  
CE  
E
I
―
= 5V, I = 0  
C
EBO  
DC current gain  
h
―
= 5V, I = 1mA  
120  
―
―
FE  
C
Collector-emitter saturation voltage  
Transition frequency  
V
―
I
= 5mA, I = 0.25mA  
C B  
0.1  
250  
3
V
CE (sat)  
f
V
V
= 10V, I = 5mA  
―
―
MHz  
pF  
T
CE  
C
Collector output capacitance  
C
= 10V, I = 0, f = 1MHz  
CB E  
6
―
―
ob  
RN1312  
Input resistor  
15.4  
32.9  
22  
47  
28.6  
61.1  
R1  
―
―
kΩ  
RN1313  
1
2007-11-01  
12345

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