Datasheet > RN1310_07

RN1310_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		开关驱动
页数	文件大小	规格书
5页	268K
描述
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RN1310_07 数据手册

RN1310,RN1311

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1310,RN1311

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Unit: mm

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2310, RN2311

Equivalent Circuit

Absolute Maximum Ratings (Ta = 25°C)

JEDEC

―

EIAJ

SC-70

Characterisstic

Collector-base voltage

Symbol

Rating

Unit

TOSHIBA

Weight: 0.006g

2-2E1A

CBO

Collector-emitter voltage

Emitter-base voltage

CEO

EBO

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

100

150

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 50V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

Emitter cut-off current

―

100

700

0.3

―

CBO

―

= 5V, I = 0

EBO

DC current gain

―

= 5V, I = 1mA

120

―

CE (sat)

Collector-emitter saturation voltage

Translation frequency

―

= 5mA, I = 0.25mA

0.1

250

―

= 10V, I = 5mA

―

MHz

―

Collector output capacitance

= 10V, I = 0, f = 1MHz

―

RN1310

Input resistor

3.29

4.7

6.11

―

kΩ

RN1311

2007-11-01

12 3 4 5

下载PDF

与RN1310_07相关器件

型号	品牌	描述	获取价格	数据表
RN1311	TOSHIBA	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)	获取价格
RN1311(TE85L)	TOSHIBA	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP Gener	获取价格
RN1311(TE85R,F)	TOSHIBA	Small Signal Bipolar Transistor	获取价格
RN1312	TOSHIBA	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	获取价格
RN1312(TE85L2)	TOSHIBA	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP	获取价格
RN1312(TE85R)	TOSHIBA	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP	获取价格