SPDT
DC to 40 GHz, RF – MEMS
Drain 1
FEATURES
Gate 1
■ High Isolation (20 dB typical @10 GHz)
■ Low Insertion Loss (0.4 dB typical @10 GHz)
■ Typical On Resistance < 3.0 Ω
■ Hermetically Sealed
Drain 2
Drain
Gate 2
Source
RMSW 220D™
■ Long Life (>1011 cycles) Electrostatic Actuation, High Off Resis-
tance (>1 GΩ), Fast Switching (5 µs), Current Handling (400
mA) ±100V Signal Range, Near Zero Harmonic Distortion, No
Quiescent Power Dissipation
RF Input Parameters
DESCRIPTION
The RMSW220D™ is a Single Pole
Frequency
2 GHz
5 GHz
10 GHz
25 GHz
35 GHz
Double Throw (SPDT) Reflective RF
Switch utilizing Radant MEMS Inc. Insertion Loss
recent breakthrough technology
that delivers high-linearity, high-
< 0.3 dB
> 32 dB
< -20 dB
< 0.4 dB
> 25 dB
< -20 dB
< 0.5 dB
> 20 dB
< -19 dB
< 0.6 dB
> 17 dB
< -18 dB
< 0.8 dB
> 13 dB
< -16 dB
Isolation
isolation and low-insertion loss in a
Return Loss
wafer-scale package.
Input IP3 (Two-tone
inputs 10 GHz and
> 65 dBm
This device is ideally suited for use 10.001 GHz @ 27 dBm)
in many applications such as wire-
less (i.e. handsets, WLAN, broad-
band wireless access, GPS receiv-
ers), RF and Microwave Multi-throw
RF Power Rating
30 dBm
1011
Active Life Cycle,
(cold-Switched)
switches, Radar Beam Steering An-
tennas, Phase shifters, and RF Test
Equipment.
Notes: Product performance specifications and switch operation are for cold switching only.
Hot switching with RF input power greater than –10 dBm can degrade lifetime of switch.
DC Input Parameters
Functional Block Diagram
Actuation Voltage, typ.
Actuation Power Consumption
90
2µW @ 1 kHz switching rate
Switch Current, Max. (Cold)
Switch Current, Max. (Hot)
250 mA
50 mA
5 µs
Drain
Source
Gate
Drain
Gate
Switching Time, Max.
(10kHz, Varies with Control Voltage)
Operating Temperatures
Storage Temperatures
- 40
- 55
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255 Hudson Road, Stow, MA01775 ● Tel: 978-562-3866 ● Fax: 978-562-6277 ● Email: sales@radantmems.com