Datasheet > RMP8N60T2

RMP8N60T2

更新时间： 2024-10-31 18:06:27

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
9页	1421K
描述
Vdss (V) : 600 V;Id @ 25C (A) : 8.0 A;Rds-on (typ) (mOhms) : 1000 mOhms;Total Gate Charge (nQ) typ : 45 nQ;Maximum Power Dissipation (W) : 147 W;Vgs(th) (typ) : 3 V;Input Capacitance (Ciss) : 1050 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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RMP8N60T2 数据手册

RMP8N60TI

RMP8N60T2

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RMP8N60 is an N-channel enhancement mode MOSFET,which uses the self-aligned

planar process and improved terminal technology,reducing the conduction loss,

enhancing the avalanche energy.

FEATURES

• Low Crss

• Low gate charge

• Fast switching

• Improved ESD capability

• Improved dv/dt capability

• 100% avalanche energy test

APPLICATIONS

• High efficiency swith mode power supplies

• Electronic lamp ballasts

• UPS

8N60

RMP8N60TI

RMP8N60T2

TO-220F

TO-220

2016-11

REV:O27

12 3 4 5 6 7...9

中文翻译

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型号	品牌	获取价格	描述	数据表
RMP8N60TI	RECTRON	获取价格	Vdss (V) : 600 V;Id @ 25C (A) : 8.0 A;Rds-on (typ) (mOhms) : 1000 mOhms;Total Gate Charge
RMP8N70T2	RECTRON	获取价格	Vdss (V) : 700 V;Id @ 25C (A) : 8.0 A;Rds-on (typ) (mOhms) : 1300 mOhms;Total Gate Charge
RMP8N70TI	RECTRON	获取价格	Vdss (V) : 700 V;Id @ 25C (A) : 8.0 A;Rds-on (typ) (mOhms) : 1300 mOhms;Total Gate Charge
RMP908	HAMMOND	获取价格	DATA SUBJECT TO CHANGE WITHOUT NOTLCE
RMPA0910-53	RAYTHEON	获取价格	Narrow Band Medium Power Amplifier, 824MHz Min, 849MHz Max,
RMPA0911-53	RAYTHEON	获取价格	Narrow Band Medium Power Amplifier, 824MHz Min, 849MHz Max,
RMPA0912-53	RAYTHEON	获取价格	Narrow Band Medium Power Amplifier, 887MHz Min, 925MHz Max,
RMPA0913-53	RAYTHEON	获取价格	Narrow Band Medium Power Amplifier, 824MHz Min, 849MHz Max, PLASTIC
RMPA0913C	FAIRCHILD	获取价格	RF/Microwave Amplifier, 1 Func
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