Datasheet > RMP7N600LD

RMP7N600LD

更新时间： 2024-06-27 12:12:20

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	548K
描述
Vdss (V) : 600 V;Id @ 25C (A) : 7.0 A;Rds-on (typ) (mOhms) : 1000 mOhms;Total Gate Charge (nQ) typ : 24 nQ;Maximum Power Dissipation (W) : 106 W;Input Capacitance (Ciss) : 1135 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-252(D-PAK)

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RMP7N600LD 数据手册

RMP7N600LD

N-Channel Power MOSFET

Features

600V, 7A, R_DS(ON)(Max.) =1.3Ω@VGS 10V.

Low Crss

Fast Switching

100% Avalanche Tested

Application

Schematic diagram

Adapter

LCD Panel Power

E-Bike Charger

Switching Mode Power Supply

Halogen-free

TO-252 -2Ltop view

Package Marking and Ordering Information

Device

Device Package

Device

Marking

Quantity

Tape width

Reel Size

RMP7N600LD

TO-252-2L

7N600

Absolute Maximum Ratings Tc 25ƱC unless otherwise noted

Limit

Symbol

Parameter

Unit

V_DS

V_GS

Drain-Source Voltage ^a

Gate-Source Voltage

Drain Current-Continuous, T_C=25°C

Drain Current-Continuous, T_C=100°C

Drain Current-Pulsed ^b

600

106

I_D

I_DM

P_D

Maximum Power Dissipation @ T_J=25°C

EAS

Single Pulsed Avalanche Energy ^d

245

°C

T_J, T_STGOperating and Store Temperature Range

-55 to 150

Thermal Characteristics

Value

Symbol

Parameter

Unit

R_θJ_C

R_θJ_A

Thermal Resistance, Junction-Case Max.

Thermal Resistance Junction-Ambient Max

1.18

110

°C/W

2022-04/112

REV:O

12 3 4 5 6

中文翻译

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