Datasheet > RMP6N65T2

RMP6N65T2

更新时间： 2024-10-31 18:04:47

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
11页	1364K
描述
Vdss (V) : 650 V;Id @ 25C (A) : 6.0 A;Rds-on (typ) (mOhms) : 1500 mOhms;Total Gate Charge (nQ) typ : 30 nQ;Maximum Power Dissipation (W) : 100 W;Vgs(th) (typ) : 3 V;Input Capacitance (Ciss) : 800 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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数据手册

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RMP6N65T2 数据手册

RMP6N65LD

(IP)(TI)(T2)

N-CHANNEL ENHANCEMENT MODE MOSFET

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is an N-channel enhancement mode MOSFET,which uses the self-aligned

RMP6N6

planar process and improved terminal technology,reducing the conduction loss,

enhancing the avalanche energy.

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650

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FEATURES

• Low Crss

• Low gate charge

• Fast switching

• Improved ESD capability

• Improved dv/dt capability

• 100% avalanche energy test

APPLICATIONS

• High efficiency swith mode power supplies

• Electronic lamp ballasts

• UPS

6N65

RMP6N65IP

RMP6N65LD

RMP6N65TI

TO-251

TO-252

TO-220F

TO-220

RMP6N65

2018-09/27

REV:B

12 3 4 5 6 7...11

中文翻译

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