Datasheet > RMP10N60HD

RMP10N60HD

更新时间： 2024-10-15 18:10:03

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	114K
描述
Vdss (V) : 600 V;Id @ 25C (A) : 10.0 A;Total Gate Charge (nQ) typ : 34 nQ;Maximum Power Dissipation (W) : 174 W;Input Capacitance (Ciss) : 2030 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : TO-263(D2-PAK)

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RMP10N60HD 数据手册

RMP10N60HD

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

ꢀ 100% Avalanche Test

BV_DSS

R_DS(ON)

I_D

600V

ꢀ Fast Switching Characteristic

0.6+

ꢀ Simple Drive Requirement

10A

ꢀ RoHS Compliant & Halogen-Free

Description

is from Advanced Power innovated design

RMP10N60HD

TO-263

and silicon process technology to achieve the lowest possible

on-resistance and fast switching performance. It provides the

designer with an extreme efficient device for use in a wide

range of power applications.

The TO-263 package is widely preferred for all commercial-

industrial surface mount applications using infrared reflow

technique and suited for high current application due to the low

connection resistance.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Rating

600

Units

V_DS

V_GS

Gate-Source Voltage

+ 30

I_D@T_C=25c

Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=100c

6.5

I_DM

P_D@T_C=25c

Total Power Dissipation

174

P_D@T_A=25c

Total Power Dissipation⁴

Single Pulse Avalanche Energy²

Avalanche Current

3.13

E_AS

I_AR

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Unit

c/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)⁴

0.72

Rthj-a

2019-12/99

REV:O

12 3 4 5 6 7

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