Datasheet > RMD7N40DN

RMD7N40DN

更新时间： 2024-10-15 18:09:47

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
9页	257K
描述
Vdss (V) : 40 V;Id @ 25C (A) : 20 A;Rds-on (typ) (mOhms) : 16 mOhms;Total Gate Charge (nQ) typ : 7.6 nQ;Maximum Power Dissipation (W) : 1.2 W;Vgs(th) (typ) : 20 V;Input Capacitance (Ciss) : 513 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : DFN3x3

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RMD7N40DN 数据手册

RMD7N40DN

Dual N-Channel PowerTrench MOSFET

Pin 1

G1 S1 S1 S1

General Description

This device includes two 40V N-Channel MOSFETs in a dual

DFN3X3 (3 mm X 3 mm MLP) package. The package is

enhanced for exceptional thermal performance.

Features

Max r_DS(on)= 20 mΩ at V_GS= 10 V, I_D= 7 A

Max r_DS(on)= 27 mΩ at V_GS= 4.5 V, I_D= 6 A

Low Inductance Packaging Shortens Rise/Fall Times

Lower Switching Losses

S2 S2

G2 S2

DFN3X3

100% Rg Tested

Termination is Lead-free and RoHS Compliant

Applications

Battery Protection

Load Switching

Point of Load

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

7N40

RMD7N40DN

DFN3X3

13 ’’

12 mm

3000 units

Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol Parameter

Ratings

Units

V_DS

V_GS

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Continuous

T_C= 25 °C

T_A= 25 °C

I_D

(Note 1a)

(Note 4)

(Note 3)

-Pulsed

E_AS

Single Pulse Avalanche Energy

Power Dissipation

T_C= 25 °C

T_A= 25 °C

P_D

(Note 1a)

1.9

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

9.7

°C/W

(Note 1a)

2018-10/80

REV:O

12 3 4 5 6 7...9

中文翻译

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