Datasheet > RMD50N60DF

RMD50N60DF

更新时间： 2024-10-31 18:09:23

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	627K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 50 A;Rds-on (typ) (mOhms) : 14 mOhms;Total Gate Charge (nQ) typ : 33 nQ;Maximum Power Dissipation (W) : 104 W;Input Capacitance (Ciss) : 1920 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : DFN5X6-8L

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中文翻译

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RMD50N60DF 数据手册

60DF

RMD50N

N-Channel Enhancement Mode Power MOSFET

Description

The RMD50N60DF uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS=60V,I_D=50A

R_DS(ON)

㸺

16mΩ @ V _GS=10V

R_DS(ON)18mΩ @ V_GS=4.5V

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

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Application

ƽ PWM

ƽ Load Switching

Halogen-free

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100% UIS TESTED!

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

DFN5X6-8L

D50N60

RMD50N60DF

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

±±0

V^GS

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

1±0

I_DM

Maximum Power Dissipation

104

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.6

W/ć

E_AS

390

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note ±)}

R_θJC

1.±

±0±±-08/59

REV:A

12 3 4 5 6 7

中文翻译

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