Datasheet > RMD50N40DFV

RMD50N40DFV

更新时间： 2024-10-31 18:09:15

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	744K
描述
Vdss (V) : 40 V;Id @ 25C (A) : 65 A;Rds-on (typ) (mOhms) : 6.8 mOhms;Total Gate Charge (nQ) typ :

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中文翻译

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RMD50N40DFV 数据手册

RMD50N40DFV

N-Channel Enhancement Mode Power MOSFET

Description

The RMD50N40DFV uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Feature

ƽ V_DS=40V,I_D=65A

< 7.5mΩ @ V

R_DS(ON)

_GS=10V (Typ:6.8mΩ)

R_DS(ON)< 10mΩ @ V_GS=4.5V (Typ:8.5mΩ)

ƽ Special process technology for high ESD capability

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized Avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

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Application

ƽ Power switching application

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

Halogen-free

P/N suffix V means AEC-Q101 qualified, e.g:RMD50N40DFV

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100% UIS TESTED!

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

- ꢀ

Tape width

Quantity

RMD50N40DFV

-ꢀ

DFN5X6-8L

D50N40

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Case ⁽⁴⁾

(4)

Ambient

R_θJA

2022-07/59

REV:O

12 3 4 5 6 7

中文翻译

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