Datasheet > RMD4A5P20TS

RMD4A5P20TS

更新时间： 2024-10-15 18:09:51

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	894K
描述
Vdss (V) : 20 V;Id @ 25C (A) : 4.5 A;Rds-on (typ) (mOhms) : 45 mOhms;Total Gate Charge (nQ) typ : 14 nQ;Maximum Power Dissipation (W) : 1.14 W;Vgs(th) (typ) : 0.7 V;Input Capacitance (Ciss) : 1500 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : TSSOP-8

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中文翻译

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RMD4A5P20TS 数据手册

RMD4A5P20TS

Enhancement Mode Power MOSFET

Dual P-Channel

Description

The RMD4A5P20TS uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

Schematic diagram

ƽ V_DS=-20V,I_D=-4.5A

R_DS(ON)<68mΩ @ V_GS=-±.8V

R_DS(ON)<42mΩ @ V_GS=-2.5V

R_DS(ON)<30mΩ @ V_GS=-4.5V

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Excellent package for good heat dissipation

TSSOP-8 top view

Application

ƽꢀ Power switching application

1. Drain 1

2. Source 1

3. Source 1

4. Gate 1

8. Drain 2

ƽꢀ Hard switched and high frequency circuits

7. Source 2

6. Source 2

5. Gate 2

Halogen-free

Pin Definition

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

5000units

TSSOP-8

DP20

RMD4A5P20TS

Ø330mm

±2mm

Absolute Maximum Ratings (T_A=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

-20

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

±±2

V^GS

-4.5

I_D

Pulsed Drain Current

-±6

I_DM

P_D

T_J,T_STG

Maximum Power Dissipation

±.±4

Operating Junction and Storage Temperature Range

-55 To ±50

2020-08/50

REV:O

12 3 4 5 6 7

中文翻译

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