Datasheet > RMD25N100DF

RMD25N100DF

更新时间： 2024-10-15 18:09:47

品牌	Logo	应用领域
RECTRON		栅光电二极管
页数	文件大小	规格书
7页	710K
描述
Vdss (V) : 100 V;Id @ 25C (A) : 25 A;Rds-on (typ) (mOhms) : 15 mOhms;Total Gate Charge (nQ) typ : 30 nQ;Maximum Power Dissipation (W) : 65 W;Vgs(th) (typ) : 1.8 V;Input Capacitance (Ciss) : 1130 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : PDFN5X6

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RMD25N100DF 数据手册

RMD25N100DF

N-Channel Enhancement Mode Power MOSFET

Applications

ꢀ Load Switch

ꢀ PWM Application

ꢀ Power management

Halogen-free

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity (PCS)

D25N100

RMD25N100DF

PDFN5X 6-D

13 inch

5000

2023-03/59

REV:O

12 3 4 5 6 7

中文翻译

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型号	品牌	获取价格	描述	数据表
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RMD2714S8(N)	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 10.0 A;Rds-on (typ) (mOhms) : 17 mOhms;Total Gate Charge (n
RMD2714S8(P)	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 12.0 A;Rds-on (typ) (mOhms) : 27 mOhms;Total Gate Charge (n
RMD30N40DF	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 30 A;Rds-on (typ) (mOhms) : 13 mOhms;Total Gate Charge (nQ)
RMD30N40DFV	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 30 A;Rds-on (typ) (mOhms) : 13 mOhms;Total Gate Charge (nQ)
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