Datasheet > RMD20N60DFV

RMD20N60DFV

更新时间： 2024-10-15 18:09:55

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	282K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 20 A;Rds-on (typ) (mOhms) : 27 mOhms;Total Gate Charge (nQ) typ : 4

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中文翻译

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RMD20N60DFV 数据手册

RMD20N60DFV

N-Channel Enhancement Mode Power MOSFET

Description

The RMD20N60DFV uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS=60V,I_D=20A

R_DS(ON)<35mΩ @ V_GS=10V

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

ƽ Special process technology for high ESD capability

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Application

ƽ Power switching application

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

Halogen-free

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ƽ P/N suffix V means AEC-Q101 qualified, e.g:RMD20N60DFV

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

DFN5X6-8L

D20N60

RMD20N60DFV

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

V^GS

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

I_DM

P_D

Maximum Power Dissipation

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.3

W/ć

E_AS

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

2023-07/15/59

REV:O

12 3 4 5 6 7

中文翻译

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