Datasheet > RMD2060S6

RMD2060S6

更新时间： 2024-10-15 18:09:59

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	1033K
描述
Vdss (V) : 20 V;Id @ 25C (A) : 2.8 A;Rds-on (typ) (mOhms) : 45 mOhms;Total Gate Charge (nQ) typ : 2.7 nQ;Maximum Power Dissipation (W) : 0.77 W;Vgs(th) (typ) : 0.7 V;Input Capacitance (Ciss) : 184 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23-6L

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中文翻译

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RMD2060S6 数据手册

RMD2060S6

N-Channel Enhancement Mode Power MOSFET

Description

The RMD2060S6 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 2.5V. This device is suitable for use as a

Battery protection or in other Switching application.

N-Channel MOSFET

General Features

ƽ V_DS= 20V,I_D= 2.8A

R_DS(ON)<80mȍ @ V_GS=2.5V

R_DS(ON)< 55mȍ @ V_GS=4.5V

ƽ High Power and current handing capability

ƽ Lead free product is acquired

ƽ Surface Mount Package

Application

ƽ Battery protection

ƽ Load switch

ƽ Power management

ƽ Halogen-free

SOT23-6L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

units

3000

SOT23-6L

Ø180mm

8mm

RMD2060S6

D2060

2023-06/59

REV:O

12 3 4 5 6 7

中文翻译

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