Datasheet > RMD1N25ES9

RMD1N25ES9

更新时间： 2024-10-15 18:09:15

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	231K
描述
Vdss (V) : 25 V;Id @ 25C (A) : 1.1 A;Rds-on (typ) (mOhms) : 500 mOhms;Total Gate Charge (nQ) typ : 0.6 nQ;Maximum Power Dissipation (W) : 0.8 W;Vgs(th) (typ) : 0.7 V;Input Capacitance (Ciss) : 30 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-363

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RMD1N25ES9 数据手册

RMD1N25ES9

N-Channel Enhancement Mode Power MOSFET

Description

The RMD1N25ES9 uses advanced trench technology to provide

excellent R_DS(ON)and low gate charge . The complementary

MOSFETs may be used to form a level shifted high side

switch, and for a host of other applications.

1 or 4

ꢀꢁ

6 or 3

ꢀ

2 or 5

5 or 2

ꢀ

General Features

V_DS= 25V,I_D=1.1A

4 or 1

ꢀꢁ

3 or 6

R_DS(ON)550

650

_GS=4.5V

_GS=2.5V

R_DS(ON)

4OP 6IEW

High power and current handing capability

Lead free product is acquired

Surface mount package

Halogen-free

P/N suffix V means AEC-Q101 qualified, e.g:RMD1N25ES9V

SOT-363

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

1N25

RMD1N25ES9

SOT-363

Ø180mm

8mm

3000units

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Parameter

Symbol

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

I_D

1.1

T_A=25

Continuous Drain Current

Pulsed Drain Current ^{(Note 1)}

Maximum Power Dissipation

I_DM

P_D

0.8

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient

156

2019-03/15

REV:O

12 3 4 5 6 7

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