Datasheet > RMD1312ECSP

RMD1312ECSP

更新时间： 2024-10-15 18:09:39

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
8页	3679K
描述
Vdss (V) : 12.0 V;Id @ 25C (A) : 13 A;Rds-on (typ) (mOhms) : 1.6 mOhms;Total Gate Charge (nQ) typ : 23 nQ;Maximum Power Dissipation (W) : 0.5 W;Vgs(th) (typ) : 0.95 V;Input Capacitance (Ciss) : 3500 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : WLCSP-10L

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中文翻译

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数据手册

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RMD1312ECSP 数据手册

RMD1312ECSP

Dual-N-Channel Enhancement Mosfet

Feature

⚫

12V,13A

R_{SS ON}_）<2.4mΩ＠V_GS=4.5V TYP=1.6 mΩ

（

R_{SS ON}_）<2.7mΩ＠V_GS=3.8V TYP=1.8 mΩ

（

R_{SS ON}_）<3.5mΩ＠V_GS=3.1V TYP=2.2 mΩ

（

9 10

S2 S2 S2 S2

R_{SS ON}_）<5.5mΩ＠V_GS=2.5V TYP=3.5 mΩ

（

S1 S1 S1

⚫

Advanced Trench Technology

Extremely Low RSS(ON)

Common Drain Design

Lead free product is acquired

ESD ＞2KV

Equivalent Circuit

Application

⚫

Battery Protection

Halogen-free

1,2,4,5. Source1

6,7,9,10. Source2

3. Gate1

8. Gate2

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

13 inch

Tape width

Quantity (PCS)

1213EED

RMD1312ECSP

WLCSP-10L

5000

ABSOLUTE MAXIMUM RATINGS (T_j=25℃ unless otherwise noted)

Parameter

Symbol

V_SS

V_GS

I_S

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

±8

Continuous Drain Current (Tc =25℃) ⁽¹⁾

Continuous Drain Current (Tc =100℃)

Pulsed Drain Current ^{(1) (3)}

I_S

I_SM

Power Dissipation

P_D

0.5

Thermal Resistance from Junction to Ambient⁽³⁾

Junction Temperature

R_θJA

T_J

250

℃/W

℃

150

Storage Temperature

T_STG

-55~ +150

2024-03/59

REV:O

12 3 4 5 6 7 8

中文翻译

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