Datasheet > RMA9N20S5

RMA9N20S5

更新时间： 2024-10-15 18:09:27

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	672K
描述
Vdss (V) : 20 V;Id @ 25C (A) : 0.87 A;Rds-on (typ) (mOhms) : 303 mOhms;Total Gate Charge (nQ) typ : 2.0 nQ;Maximum Power Dissipation (W) : 0.28 W;Input Capacitance (Ciss) : 43 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-523

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RMA9N20S5 数据手册

Preliminary

RMA9N20S5

N-ChannelEnhancement Mode Power MOSFET

Description

The RMA9N20S5 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS=20V,I_D=0.87A

R_DS(ON)< 455mΩ @ V_GS=1.8V

R_DS(ON)< 305mΩ @ V_GS=2.5V

_DS(ON)< 230mΩ @ V_GS=4.5V

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Excellent package for good heat dissipation

ƽ Special process technology for high ESD capability

Schematic diagram

Application

ƽ SMPS and general purpose applications

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

Halogen-free

SOT523 top view

100% UIS TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

-ꢀ

0101

RMA9N20S5

SOT523

ꢀ

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

VGS

0.87

0.7

I_D

)

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(70ć

2.2

I_DM

Maximum Power Dissipation

0.28

P_D

T_J,T_STG

Operating Junction and Storage Temperature Range

-55 To 150

2020-07/103

REV:C

12 3 4 5 6 7

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