Datasheet > RM80N100DF

RM80N100DF

更新时间： 2024-11-21 20:11:03

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
6页	194K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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RM80N100DF 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.69
Base Number Matches：	1

RM80N100DF 数据手册

RM80N100DF

Power MOSFET

N-Channel Enhancement Mode

Description

The RM80N100DF uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

Schematic diagram

General Features

ƽ V_DS=100V,I_D=80A

R_DS(ON)<5.5mΩ @ V_GS=10V

ƽ Excellent gate charge x R_DS(on)product(FOM)

ƽ Very low on-resistance R_DS(on)

ƽ Pb-free lead plating

Marking and pin assignment

ƽ 100% UIS tested

Application

ƽ DC/DC Converter

ƽ Ideal for high-frequency switching and

synchronous

Halogen-free

rectification

100% UIS TESTED!

100% ꢀVds TESTED!

DFN5X6-8L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

RM80N100DF

80N100

DFN5X6-8L

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

V^DS

V^GS

I_D

Limit

100

Unit

Drain-Source Voltage

Gate-Source Voltage

20/-12

Drain Current-Continuous (Package Limited)

Pulsed Drain Current

280

140

0.7

I_DM

Maximum Power Dissipation

P_D

Derating factor

W/ć

Single pulse avalanche energy^{(Note 5)}

E_AS

155

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

2020-03/59

REV:O

12 3 4 5 6

中文翻译

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RM80N60LD	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 80 A;Rds-on (typ) (mOhms) : 7 mOhms;Total Gate Charge (nQ)
RM80N650T7	RECTRON	获取价格	Vdss (V) : 650 V;Id @ 25C (A) : 80 A;Rds-on (typ) (mOhms) : 37 mOhms;Total Gate Charge (nQ