Datasheet > RM80N100AT2

RM80N100AT2

更新时间： 2024-11-21 20:10:35

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
7页	410K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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RM80N100AT2 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.69
Base Number Matches：	1

RM80N100AT2 数据手册

RM80N100AT2

N-Channel Super Trench Power MOSFET

Description

The RM80N100AT2 uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

General Features

Schematic diagram

ƽ V_DS=100V,I_D=80A

R_DS(ON)=7.2mΩ(typical) @ V_GS=10V

R_DS(ON)=9.5mΩ(typical) @ V_GS=4.5V

ƽ Excellent gate charge x R_DS(on)product(FOM)

ƽ Very low on-resistance R_DS(on)

ƽ 175 °C operating temperature

ƽ Pb-free lead plating

ƽ 100% UIS tested

Application

TO-220-3L top view

ƽ DC/DC Converter

ƽ Ideal for high-frequency switching and synchronous

rectification

ƽ Halogen-free

P/N suffix V means AEC-Q101 qualified, e.g:RM80N100AT2V

100% UIS TESTED!

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

80N100

RM80N100AT2

TO-220-3L

ꢀ-

-ꢀ

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

100

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

320

I_DM

Maximum Power Dissipation

125

P_D

Derating factor

Single pulse avalanche energy^{(Note 5)}

0.83

W/ć

E_AS

320

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

2019-04/15

REV:O

12 3 4 5 6 7

中文翻译

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