Datasheet > RM78N100LD

RM78N100LD

更新时间： 2024-10-31 18:09:03

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
8页	768K
描述
Vdss (V) : 100 V;Id @ 25C (A) : 60 A;Total Gate Charge (nQ) typ : 38.5 nQ;Maximum Power Dissipation (W) : 63 W;Vgs(th) (typ) : 1.8 V;Input Capacitance (Ciss) : 2022 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : TO-252(D-PAK);Certified (AEC-Q101...etc) : AEC-Q101

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RM78N100LD 数据手册

RM78N100LD

N-Channel Super Trench Power MOSFET

Description

The RM78N100LD uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

Schematic diagram

General Features

ƽ V_DS=100V,I_D=78A

R_DS(ON)=7.5mΩ(typical) @ V_GS=10V

R_DS(ON)=10.5mΩ(typical) @ V_GS=4.5V

ƽ Excellent gate charge x R_DS(on)product(FOM)

ƽ Very low on-resistance R_DS(on)

ƽ 175 °C operating temperature

ƽ Pb-free lead plating

ƽ 100% UIS tested

Pin assignment

Application

ƽ DC/DC Converter

ƽ Ideal for high-frequency switching and synchronous

rectification

ƽ Halogen-free

P/N suffix V means AEC-Q101 qualified, e.g:RM78N100LDV

100% UIS TESTED!

100% ∆Vds TESTED!

TO-252-2L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

78N100

RM78N100LD

TO-252-2L

-ꢀ

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

2022-05/59

REV:B

12 3 4 5 6 7 8

中文翻译

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