Datasheet > RM70P40LD

RM70P40LD

更新时间： 2024-10-15 18:09:43

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	281K
描述
Vdss (V) : 40 V;Id @ 25C (A) : 70 A;Rds-on (typ) (mOhms) : 7.5 mOhms;Total Gate Charge (nQ) typ :

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RM70P40LD 数据手册

RM70P40LD

P-Channel Enhancement Mode Power MOSFET

Description

The RM70P40LD uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge .This

device is well suited for high current load applications.

General Features

ƽ V_DS=-40V,I_D=-70A

R_DS(ON)<10mΩ @ V_GS=-10V

Schematic diagram

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

ƽ Special process technology for high ESD capability

Application

ƽ Power switch

Marking and pin assignment

ƽ Load switch in high current applications

ƽ DC/DC converters

ƽ Halogen-free

ƽ P/N suffix V means AEC-Q101 qualified, e.g:RM70P40LDV

100% UIS TESTED!

100% ꢀVds TESTED!

TO-252-2L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

70P40

RM70P40LD

TO-252-2L

-ꢀ

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

-40

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

-70

-49.5

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

-200

I_DM

Maximum Power Dissipation

130

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

1.04

W/ć

E_AS

1012

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

2019-02/15

REV:

12 3 4 5 6 7

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