Datasheet > RM70P30LD

RM70P30LD

更新时间： 2024-10-15 18:09:55

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	296K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 70 A;Rds-on (typ) (mOhms) : 6.0 mOhms;Total Gate Charge (nQ) typ : 60 nQ;Maximum Power Dissipation (W) : 90 W;Input Capacitance (Ciss) : 3450 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : TO-252(D-PAK)

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RM70P30LD 数据手册

RM70P30LD

P-Channel Enhancement Mode Power MOSFET

Description

The RM70P30LD uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It can

be used in a wide variety of applications. It is ESD protested.

General Features

V_DS=-30V,I_D=-70A

Schematic diagram

Marking and pin assignment

TO-252 -2Ltop view

R_DS(ON)<7.2mΩ @ V_GS=-10V

R_DS(ON)<12mΩ @ V _GS=-4.5V

Super high dense cell design

Advanced trench process technology

Reliable and rugged

High density celldesign for ultra low on-resistance

Application

Power switch

DC/DC converters

Halogen-free

P/N suffix V means AEC-Q101 qualified, e.g:RM70P30LDV

100% UIS TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

70P30

RM70P30LD

TO-252-2L

Absolute Maximum Ratings (T_C=25 unless otherwise noted)

Parameter Symbol

Limit

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

V^GS

-70

-50

I_D

I_D(100

I_DM

Drain Current-Continuous(T_C=100

Pulsed Drain Current

)

-200

Maximum Power Dissipation

Single pulse avalanche energy ^{(Note 5)}

P_D

E_AS

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

2019-05/83

REV:O

12 3 4 5 6

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