Datasheet > RM70P30DF

RM70P30DF

更新时间： 2024-06-27 12:12:37

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
8页	303K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 70 A;Rds-on (typ) (mOhms) : 6.0 mOhms;Total Gate Charge (nQ) typ : 60 nQ;Maximum Power Dissipation (W) : 90 W;Input Capacitance (Ciss) : 3450 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : DFN5X6-8L

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RM70P30DF 数据手册

RM70P30DF

P-Channel Enhancement Mode Power MOSFET

Description

Pin5,6,7,8

The RM70P30DF uses advanced trench technology to provide

excellent R_DS(ON), low gate charge . This device is suitable for

use as a load switch or in PWM applications.

Pin4

General Features

V_DS= -30V,I_D= -70A

R_DS(ON)< 12mΩ @ V_GS=-4.5V

Pin1,2,3

_DS(ON)< 7.2mΩ @ V =-10V

High Power and current handing capability

Lead free product is acquired

Surface mount package

Application

PWM applications

Load switch

Power management

Halogen-free

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

A3031

RM70P30DF

DFN5X6-8L

Ø330mm

12mm

2500 units

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Parameter

Symbol

V^DS

Limit

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

I_D

-70

Drain Current-Continuous(T_C=100

Drain Current-Pulsed ^{(Note 1)}

Maximum Power Dissipation

)

I_D(100

)

-50

-200

I_DM

P_D

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case ^{(Note 2)}

R_θJC

1.6

2021-11/83

REV:B

12 3 4 5 6 7 8

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