Datasheet > RM6P20ES6

RM6P20ES6

更新时间： 2024-10-15 18:09:51

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	804K
描述
Vdss (V) : 20 V;Id @ 25C (A) : 6.0 A;Rds-on (typ) (mOhms) : 30 mOhms;Total Gate Charge (nQ) typ : 12 nQ;Maximum Power Dissipation (W) : 1.6 W;Vgs(th) (typ) : 0.55 V;Input Capacitance (Ciss) : 950 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : SOT23-6

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RM6P20ES6 数据手册

RM6P20ES6

P-Channel Enhancement Mode Power MOSFET

Description

The RM6P20ES6 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as1.8V. This device is suitable for use as a

load switch or in PWM applications .It is ESD protested.

General Features

ƽ V_DS= -20V,I_D=-6A

Schematic diagram

R_DS(ON)< 60mΩ @ V_GS=-2.5V

_DS(ON)< 45mΩ @ V_GS=-4.5V

ESD Rating: 2500V HBM

ƽ High Power and current handing capability

ƽ Lead free product is acquired

ƽ Surface mount package

Application

ƽ PWM application

SOT23-6 top view

ƽ Load switch

● Halogen-free

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

8 mm

Quantity

6P20

SOT23-6

Ø180mm

3000 units

RM6P20ES6

Absolute Maximum Ratings (TA=25ćunless otherwise noted)

Parameter Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

-20

V^DS

V^GS

I_D

-6

Drain Current-Pulsed (Note 1)

-30

I_DM

Maximum Power Dissipation

1.6

P_D

T_J,T_STG

Operating Junction and Storage Temperature Range

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient (Note 2)

R_θJA

78.2

ć/W

Electrical Characteristics (TA=25ćunless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BV_DSS

V_GS=0V I_D=-250μA

-20

2024-05/15

REV:O

12 3 4 5 6 7

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