Datasheet > RM6N800ALD

RM6N800ALD

更新时间： 2024-09-16 18:09:23

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
8页	1154K
描述
Vdss (V) : 800 V;Id @ 25C (A) : 6.0 A;Rds-on (typ) (mOhms) : 780 mOhms;Total Gate Charge (nQ) typ : 13 nQ;Maximum Power Dissipation (W) : 62.5 W;Vgs(th) (typ) : 3.5 V;Input Capacitance (Ciss) : 506 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-252(D-PAK)

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RM6N800ALD 数据手册

RM6N800ALD

V_DS@ T_j,max

R_DS(on),max

I_D

850

0.90

RM6N800ALD

6N800

Absolute Maximum Rating (T_c=25^oC unless otherwise specified)

Parameter

Symbol

V_DSS

Rating

800

·30

Unit

Drain – Source voltage

Gate – Source voltage

V_GSS

T_C=25 ^oC

Continuous drain current

I_D

T_C=100 ^oC

3.8

Pulsed drain current⁽¹⁾

Power dissipation

I_DM

P_D

62.5

Single - pulse avalanche energy

MOSFET dv/dt ruggedness

E_AS

200

dv/dt

V/ns

Diode dv/dt ruggedness⁽²⁾

Storage temperature

dv/dt

T_stg

V/ns

^oC

-55 ~150

Maximum operating junction

temperature

T_j

150

^oC

1) Pulse width t_Plimited by T_j,max

2) I_SD˺ I_D, V_{DS peak}˺ V_(BR)DSS

2022-01/117

REV:A

12 3 4 5 6 7 8

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