Datasheet > RM6N100S4

RM6N100S4

更新时间： 2024-10-15 18:09:39

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
8页	393K
描述
Vdss (V) : 100 V;Id @ 25C (A) : 6.0 A;Rds-on (typ) (mOhms) : 110 mOhms;Total Gate Charge (nQ) typ : 15.5 nQ;Maximum Power Dissipation (W) : 3 W;Vgs(th) (typ) : 1.8 V;Input Capacitance (Ciss) : 690 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-223

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RM6N100S4 数据手册

RM6N100S4

N-Channel Enhancement Mode Power MOSFET

Description

The RM6N100S4 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS= 100V,I_D= 6A

Schematic diagram

R_DS(ON)< 140mΩ @ V_GS=10V (Typ:110mΩ)

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Excellent package for good heat dissipation

6N100

xxxx

Application

ƽꢀ Power switching application

ƽꢀ Hard switched and high frequency circuits

ƽꢀ Uninterruptible power supply

SOT-223 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

6N100

RM6N100S4

SOT-223-3L

Ø330mm

12mm

2500 units

Absolute Maximum Ratings (T_A=25ćunless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

100

V^DS

Gate-Source Voltage

±20

V^GS

Drain Current-Continuous

Drain Current-Pulsed ^{(Note 1)}

I_D

I_DM

Maximum Power Dissipation

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

41.7

ć/W

Electrical Characteristics (T_A=25ćunless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

V_GS=0V I_D=250μA

100

110

V_DS=100V,V_GS=0V

μA

2017-06

REV:O15

12 3 4 5 6 7 8

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