Datasheet > RM60N80D3

RM60N80D3

更新时间： 2024-06-27 12:14:04

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	180K
描述
Vdss (V) : 80 V;Id @ 25C (A) : 60 A;Rds-on (typ) (mOhms) : 7.2 mOhms;Total Gate Charge (nQ) typ : 29 nQ;Maximum Power Dissipation (W) : 50 W;Input Capacitance (Ciss) : 1738 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : DFN3x3

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RM60N80D3 数据手册

RM60N80D3

N-Channel 80

V Fast Switching MOSFET

General Features

ƽ V_DS=80V,I_D=60A

R_DS(ON)<8.7mΩ @ V _GS=10V

R_DS(ON)<13mΩ @ V _GS=4.5V

ƽ Advanced Trench MOS Technology

ƽ 100% EAS Guaranteed

ƽ Fast Switching Speed

Schematic diagram

ƽ Green Device Available

Application

ƽ SMPS and general purpose applications

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

Halogen-free

DFN 3x3 top view

100% UIS TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

60N80

RM60N80D3

DFN 3x3

ꢀ

-ꢀ

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Limit

Unit

Symbol

V_DS

Parameter

Drain-Source Voltage

s20

V_GS

Gate-SouUce Voltage

Continuous Drain Current, V_GS@ 10V¹

I_D@T_C=25ɵ

I_D@T_C=100ɵ

Pulsed Drain Current²

Single Pulse Avalanche Energy³

200

I_DM

EAS

I_AS

Avalanche Current

Total Power Dissipation⁴

P_D@T_C=25ɵ

-55 to 150

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

2022-02/83

REV:O

12 3 4 5 6

中文翻译

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